Semiconductor integrated processing equipment and semiconductor processing method

Abstract

The invention discloses semiconductor integrated processing equipment and a semiconductor processing method. The semiconductor integrated processing equipment comprises at least two process chambers (1), a high-temperature passage (2) and a transmission device, wherein the high-temperature passage (2) communicates the process chambers (1) and is provided with a heat preservation device, the transmission device comprises a transmission part (31) and a driving part (32), the driving part (32) is arranged outside the process chambers (1) and the high-temperature passages (2), the transmission part (31) is arranged at an end part of the driving part (32), and the driving part (32) drives the transmission part (31) to extend into and move in the process chambers (1) and the high-temperature passage (2). The technical problem that a substrate is cooled among machining processes in a transition way is solved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor processing, and in particular, the invention relates to a semiconductor integrated processing equipment and a semiconductor processing method. Background technique [0002] Modern semiconductor processing and production technologies are mostly based on processes such as thin film preparation and processing. For a complete semiconductor device structure, the entire processing process usually includes multiple sequential processes, and the sequence and conditions of these processing processes are determined according to the characteristics of the device itself. Generally, the processing technology may include physical and chemical processes such as physical vapor deposition (PVD), chemical vapor deposition (CVD), ion implantation, and etching. Since the mechanisms of these processes are different, the required conditions such as temperature, pressure and gas atmosphere are also different, so ...

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Problems solved by technology

One of the problems is that the processing equipment will cause the material itself to cool down when it removes the material from the process chamber

Since the material substrate wafer and the epitaxial layer on it usually have a mismatch in lattice constant and thermal expansion coefficient, the temperature drop will introduce a large stress between the substrate wafer and the epitaxial layer, and these stresses will cause crystallization in the epitaxial layer. Grid deformation, resulting in defects

[0004] However, at this stage, it is difficult to transport materials from one process chamber to another in a high temperature environment, because the heat resistance of the transmission device used to transport materials on the processing equipment is not good, especially the driving parts cannot be used in high temperature environments. next work

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