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Infrared one-photon detection system of parallel avalanche photodiode array structure

A diode array and single-photon detection technology, which is applied in the direction of electric radiation detectors, can solve problems such as the inability to overcome the influence of post-pulse effects, achieve the effects of overcoming post-pulse effects, improving operating frequency and detection efficiency, and reducing dead time

Active Publication Date: 2017-10-20
UNIV OF SCI & TECH OF CHINA
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Problems solved by technology

However, for high-speed detectors whose counting repetition rate requires more than GHz, the dead time between two effective detections can only be set to the order of 1ns at most, which is far lower than the carrier lifetime in APD, so it cannot overcome high-speed detection at all. after-pulse effect

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  • Infrared one-photon detection system of parallel avalanche photodiode array structure
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  • Infrared one-photon detection system of parallel avalanche photodiode array structure

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Embodiment 1

[0036] The parallel APD array is composed of 8 discrete InGaAs / InP APD devices, that is, the number of channels N is 8. The APD in the parallel APD array adopts the ETX40 model InGaAs / InP APD of the American JDSU company, the minimum bandwidth is 1.6GHz, and the avalanche voltage is 46.2V.

[0037] The high-speed pulse-gated timing signal circuit 12 provides high-speed pulse-gated signals and gated timing signals to the parallel APD array. The high-frequency power signal source adopts the N5181A model high-frequency signal source, and uses the 5865 model 12.5GHz broadband power amplifier to power the signal. Amplify and provide pulse gating signal to the parallel APD array, the output pulse repetition frequency is 1.6GHz, the pulse width is about 310ps, and the output amplitude is 6.2Vp-p. At the same time, the pulse gating signal is divided by N to generate N high-speed gating timing signals. The N gating timing signals will have a phase difference of 1 / N cycles in turn. Sinc...

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Abstract

The invention relates to an infrared one-photon detection system of a parallel avalanche photodiode array structure, including a parallel APD array drive circuit. The output end of the parallel APD array drive circuit is connected with the input end of a parallel APD array. The output end of the parallel APD array is connected with the input end of a signal detection circuit, the output end of the signal detection circuit is connected with the input end of an analog-digital conversion circuit, the output end of the signal analog-digital conversion circuit is connected with the input end of a signal processing circuit, and the output end of the signal processing circuit is connected to the input end of a digital signal output circuit. The system uses the parallel APD array to convert a single photon signal into an avalanche electrical signal, uses a direct current bias voltage circuit to operate the parallel APD array in a Geiger mode, realizes the channel timing switching function of the parallel APD array by using a high-speed pulse gating timing signal circuit and a multi-channel optical switch, reduces the dead time of the APD device, overcomes the post-pulse effect of the detector, and effectively improves the working frequency and the detection efficiency of the detector.

Description

technical field [0001] The invention relates to the technical field of weak signal detection in quantum communication and quantum information technology, in particular to an infrared single-photon detection system with a parallel avalanche photodiode array structure. Background technique [0002] At present, the infrared single photon detector mainly uses the method of photoelectric detection using APD devices. The principle is to use the photoelectric effect of photogenerated carriers. When a junction semiconductor device receives a single photon, it generates a carrier with the help of a strong electric field. The avalanche multiplication effect of electrons is used to obtain highly sensitive weak avalanche signals, and some special photoelectric signal processing methods have been developed, which have made great progress and have been practically applied in actual quantum cryptography communication systems. [0003] Infrared single-photon detectors based on InGaAs / InP AP...

Claims

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Application Information

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IPC IPC(8): G01J5/22
CPCG01J5/22
Inventor 徐军何德勇易波
Owner UNIV OF SCI & TECH OF CHINA
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