Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Surface treatment method for bismuth telluride base thermoelectric material wafer

A technology of thermoelectric materials and surface treatment, which is applied in the direction of circuits and semiconductor devices, etc., can solve the problems of many conversion steps of spraying and electroplating process, low maximum temperature difference of coolers, affecting thermoelectric performance, etc., and achieve excellent solderability and protection performance, Effect of reduced fluctuation and high bonding strength of coating

Inactive Publication Date: 2017-10-03
GUANGDONG INST OF RARE METALS
View PDF5 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are many conversion steps in the spraying and electroplating process, resulting in chip breakage, low yield and high cost. At the same time, due to the impact of high temperature and high pressure on the surface of the chip, the thermoelectric performance is affected, and finally the maximum temperature difference of the refrigerator is low and the service life is short.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Chemical degreasing: the degreasing solution is an aqueous solution, which is prepared by mass percentage from 8% sodium hydroxide, 5% sodium carbonate, 1.5% sodium phosphate and 0.5% sodium silicate, heated to 85°C, and soaked for 30 minutes , After degreasing, rinse with cold water.

[0022] Activation: The activation solution is an aqueous solution, containing 20ml of 37% hydrochloric acid, 5ml of hydrofluoric acid and 20 3g of surfactant Tween per liter, and activate at room temperature for 3min; Anode, stainless steel as cathode, current density 5A / m 2 ; Process 2min; Finally, use the pre-plating nickel activation solution containing 240g of nickel chloride and 300ml of 37% hydrochloric acid per liter at the nickel plate anode and wafer cathode with a current density of 5.5A / m 2 ; Treatment 3min.

[0023] Nickel plating: The nickel plating solution is composed of nickel sulfate 280g / L, nickel chloride 50g / L, boric acid 40g / L, wetting agent NP-A 2ml / L and cylinder...

Embodiment 2

[0026] Chemical degreasing: The degreasing solution is an aqueous solution, which is prepared by 5% sodium hydroxide, 3% sodium carbonate, 3% sodium phosphate and 1% sodium silicate by mass percentage. Heat to 95°C, soak for 20 minutes, and rinse with cold water after degreasing.

[0027] Activation: The activation solution is an aqueous solution, containing 15ml of 37% hydrochloric acid, 3ml of hydrofluoric acid and 20 6g of surfactant Tween per liter, activated at room temperature for 2min; Anode, stainless steel as cathode, current density 5A / m 2 ; Process 2min; Finally, use the pre-plating nickel activation solution containing 240g of nickel chloride and 300ml of 37% hydrochloric acid per liter at the nickel plate anode and wafer cathode with a current density of 7.5A / m 2 ; Process 2min.

[0028] Nickel plating: The nickel plating solution is composed of nickel sulfate 350g / L, nickel chloride 25g / L, boric acid 50g / L, wetting agent NP-A 1ml / L and cylinder opening agent M-...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a surface treatment method for a bismuth telluride base thermoelectric material wafer. The surface treatment method includes the following steps that the wafer is put into oil removing liquid for oil removing, and cold water is used for thorough flushing; activating liquid is firstly used for conducting room-temperature activating; then an electrolyte the same as the oil removing liquid is used for treatment; finally, pre-nickel-plating activating liquid is used for treatment; nickel plating liquid is used for electroplating, the wafer is taken out after nickel plating, and cold water is used for thorough flushing; and tin bismuth plating liquid is used for electroplating, the wafer is taken out after tin bismuth plating is over, cleaning and drying are conducted, and surface treatment of a bismuth telluride base thermoelectric material is completed. By means of the surface treatment method, a multi-step activating treatment process is adopted for ensuring the activating effect of the surface of the wafer, and the plating combining strength is high.

Description

technical field [0001] The invention relates to the field of chemical surface treatment, in particular to the chemical surface treatment of bismuth telluride-based thermoelectric materials. Background technique [0002] Thermoelectric materials are functional materials that use carrier movement energy to convert thermal energy and electrical energy into each other. The application of thermoelectric materials does not require the use of transmission parts, and there is no noise and no waste during operation. It is the same as the application of secondary energy sources such as solar energy, wind energy, and water energy. It has no pollution to the environment, and this material has reliable performance and long service life. , is an environmentally friendly material with broad application prospects. [0003] Bismuth telluride-based thermoelectric materials are still the materials with the best thermoelectric performance at room temperature, and have been commercialized. Gene...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C25D7/12C25D5/12
CPCC25D5/12C25D7/12
Inventor 高远曹洪杨金明亚郭秋松张魁芳刘志强
Owner GUANGDONG INST OF RARE METALS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com