Laminated electric field modulation high-voltage MOSFET structure and method for manufacturing same

Abstract

The invention provides a laminated electric field modulation high-voltage MOSFET structure and a method for manufacturing the same. The MOSFET structure includes a semiconductor substrate provided with the epitaxial layer of a laminated electric field modulation structure and the metal-oxide-semiconductor (MOS) structure on the laminated electric field modulation. The laminated electric field modulation is an N / P / N / P structure composed of alternate n-type semiconductors and p-type semiconductors. The N / P structure and the semiconductor substrate have the same material. The N-doped region and the P-doped region in the layer are aligned to each other. The invention provides different methods for manufacturing the electric field modulation structure, including a high-energy ion implantation method, an etching deep groove and filling method, and an etching deep groove and sidewall ion implantation method, thereby laying the foundation for the fabrication of a device. The MOSFET obtained by the technical scheme in the invention not only inherits advantages of increasing blocking voltage and decreasing on-resistance of a traditional semi-super junction structure, but also reduces the difficulty of processing technology of each electric field modulation structure layer.

Description

technical field [0001] The invention relates to a MOSFET structure, in particular to a laminated electric field modulation high-voltage MOSFET structure and a manufacturing method thereof. Background technique [0002] Metal-Oxide Semiconductor Field-Effect Transistor, referred to as Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), is a field-effect transistor (field-effect transistor) that can be widely used in high-voltage and high-power fields. . [0003] The blocking voltage and forward conduction resistance of the traditional power semiconductor device MOSFET have mutual constraints. Increasing the thickness of the epitaxial layer and reducing the doping concentration can increase the blocking voltage, but at the same time increase the conduction resistance, thereby reducing the forward conduction resistance. To the current density, on the contrary, reducing the thickness of the epitaxial layer and increasing the doping concentration can reduce the on-resist...

AI Technical Summary

Problems solved by technology

[0003] The blocking voltage and forward conduction resistance of the traditional power semiconductor device MOSFET have mutual constraints. Increasing the thickness of the epitaxial layer and reducing the doping concentration can increase the blocking voltage, but at the same time increase the conduction resistance, thereby reducing the forward conduction resistance. On the contrary, reducing the thickness of the epitaxial layer and increasing the doping concentration can reduce the on-resistance, but at the same time damage the blocking voltage

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