Semiconductor structure and manufacturing method thereof

Abstract

The present disclosure provides a semiconductor structure which comprises a semiconductive substrate and a doped region in the semiconductive substrate. The doped region has a conductivity type opposite to the semiconductive substrate. The semiconductor structure also includes a capacitor in the doped region where the capacitor comprises a plurality of electrodes and the plurality of electrodes are insulated with one another. The semiconductor structure further includes a plug in the capacitor and surrounded by the plurality of electrodes.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor technology, and in particular, to a semiconductor structure and a manufacturing method thereof. Background technique [0002] Electronic devices including semiconducting devices are essential to many modern applications. Technological advances in materials and design have produced many generations of semiconducting devices, each with smaller and more complex circuits than the previous generation. In the course of advancement and innovation, functional density (ie, the number of interconnected devices per chip area) has generally increased while geometry size (ie, the smallest component that can be produced using a fabrication process) has decreased. Such advances have increased the complexity of handling and manufacturing semiconducting devices. [0003] In modern integrated circuit (IC) fabrication, on-chip capacitors are available for a large number of applications such as dy...

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Problems solved by technology

However, as chips are progressively made thinner, the stiffness and robustness of the wafer containing the chip may be more easily compromised because the wafer, together with the embedded features, does not provide sufficient stress resistance

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