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Alkali-free glass substrate and preparation method thereof

An alkali-free glass and substrate technology, applied in the field of glass manufacturing, can solve the problems of difficulty in simultaneously improving chemical resistance and strain point temperature, high density of alkali-free glass substrates, and insufficient elastic modulus, achieving low density and good production lines. rate improvement, higher than the modulus effect

Active Publication Date: 2021-02-09
DONGXU OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0018] The purpose of the present invention is to overcome the existing alkali-free glass substrates with high density, insufficient elastic modulus, low specific modulus, difficulty in improving chemical resistance and strain point temperature at the same time, high energy consumption in production and processing, high cost and other problems. To solve the problem of using toxic clarifiers, an alkali-free glass substrate and its preparation method and an alkali-free glass substrate prepared by the method are provided

Method used

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  • Alkali-free glass substrate and preparation method thereof
  • Alkali-free glass substrate and preparation method thereof

Examples

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Effect test

Embodiment 1-15 and comparative example 1-5

[0084] Mix the components in the composition of the alkali-free glass substrate evenly under the condition of stirring, pour the mixture into a platinum crucible, and then heat it in a resistance furnace at 1580°C for 4 hours to melt, and stir it with a platinum rod to defoam , Homogenization. The molten glass is poured into a stainless steel cast iron mold to form a specified block glass product, and then the glass product is annealed in the annealing furnace for 2 hours, and then the power is turned off and the furnace is cooled to 25°C. The glass product is cut, ground and polished, then washed with deionized water and dried to obtain an alkali-free glass substrate with a thickness of 0.5 mm.

[0085] Table 1 shows the materials and dosage used to prepare the alkali-free glass substrates in Examples 1-15 and Comparative Examples 1-5 and the test results of various properties of the prepared alkali-free glass substrates.

[0086] The C value of the non-alkali glass substrat...

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Abstract

The invention discloses an alkali-free glass substrate and a preparation method thereof. The erosion amount of the alkali-free glass substrate in the HF solution with a concentration of 10% by weight is less than 5.5 mg / cm 2 , based on the total molar weight of each component in its composition, its composition includes: 70‑74mol% SiO 2 , 11‑14mol% Al 2 o 3 , 0‑2.5mol% ZnO, 10‑17mol% RO and 0.01‑2mol% RE 2 o 3 , wherein, RO is at least one of MgO, CaO, SrO and BaO; RE 2 o 3 for Y 2 o 3 , La 2 o 3 、Gd 2 o 3 、Ce 2 o 3 , Yb 2 o 3 and Lu 2 o 3 at least one of the The preparation method comprises: melting, defoaming, homogenizing, forming, cooling, cutting, polishing, washing and drying after mixing each component in sequence. The alkali-free glass substrate has excellent comprehensive properties.

Description

technical field [0001] The invention relates to the field of glass manufacturing, in particular to an alkali-free glass substrate and a preparation method thereof. Background technique [0002] With the rapid development of the optoelectronic industry, the demand for various display devices is increasing, such as active matrix liquid crystal display (AMLCD), organic light emitting diode (OLED) and active matrix liquid crystal display (LTPS TFT- LCD) devices, these display devices are based on the use of thin-film semiconductor materials to produce thin-film transistor (TFT) technology. The mainstream silicon-based TFT can be divided into amorphous silicon (a-Si) TFT, polycrystalline silicon (p-Si) TFT and single crystal silicon (SCS) TFT, among which amorphous silicon (a-Si) TFT is the current mainstream TFT-LCD The applied technology, amorphous silicon (a-Si) TFT technology, can be completed at a temperature of 300-450°C during the production process. LTPS polysilicon (p-...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C3/095C03C3/087C03C3/085C03C3/083C03C1/00
CPCC03C1/004C03C3/083C03C3/085C03C3/087C03C3/095C03C15/00
Inventor 张广涛王俊峰李刚闫冬成王丽红郑权
Owner DONGXU OPTOELECTRONICS TECH CO LTD
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