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Low-power-consumption reference voltage source

A reference voltage source and reference voltage technology, applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problems of limited application, few adjustable parameters of circuit structure, and non-adjustable reference voltage, etc., to achieve maximum flexibility, The effect of good uniformity and compact circuit structure

Inactive Publication Date: 2017-08-18
SOUTH WEST INST OF TECHN PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the E / D structure reference voltage source of the classic structure also has disadvantages: mainly the output reference voltage is not adjustable
However, the original circuit structure has too few adjustable parameters, which limits the application in mass production.

Method used

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Embodiment Construction

[0017] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0018] refer to figure 1 . In the embodiments described below, the low power consumption reference voltage source includes: a main branch composed of a reference voltage generating circuit and a bias current generating circuit, and a feedback branch for stabilizing the reference voltage. The feedback branch is electrically connected between the grounded source of the NMOS transistor MN2 and the source of the PMOS transistor MP4 of the main branch. The feedback branch is composed of an enhanced NMOS transistor MN5, a voltage dividing resistor R1 and a resistor R2 connected in series, wherein the gate of MN5 is electrically connected to the drain of MP4, and the gate terminal of MN2 is connected between the voltage dividing resistor R1 and the resistor R2. The threshold voltage of the enhancement NMOS transistor MN2 and the threshold...

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Abstract

The invention provides a low-power-consumption reference voltage source which is simple in circuit structure, adjustable in output reference voltage and high in temperature stability. The technical scheme includes that in a main branch comprising a reference voltage generation circuit and a bias current generation circuit, a feedback branch is electrically connected between a grounding source electrode of an NMOS (N-channel metal oxide semiconductor) field effect transistor MN2 and a source electrode of a PMOS (P-channel metal oxide semiconductor) transistor MP4 and comprises an enhanced NMOS field effect transistor MN5, a divider resistor R1 and a resistor R2 which are sequentially connected in series, a grid electrode of the MN5 is electrically connected with a drain electrode of the MP4, a grid end of the MN2 is connected between the divider resistor R1 and the resistor R2, and the threshold voltage of the enhanced NMOS transistor MN2 and the threshold voltage of a depletion type NMOS transistor MN1 are linearly overlapped at a grid electrode of the MN2 by the MP4 to obtain reference voltage VREF outputted from a source electrode of the MN5.

Description

technical field [0001] The invention relates to the technical field of analog integrated circuits, which are mainly used in analog and digital converters, power converters, power amplifiers and other circuits. The power supply voltage with low voltage and low power consumption characteristics is lower than 2.5V, and the maximum current consumption is less than 1μA the reference voltage source. Background technique [0002] The reference voltage source is an extremely important part of contemporary analog integrated circuits. It can provide a voltage reference that does not vary with temperature and power supply voltage for systems such as series regulator circuits, ADCs, and DACs. In the traditional design, the Zener breakdown characteristic of the Zener diode can be used to build a reference source that works near the breakdown voltage, but it has the disadvantages of high noise and being easily affected by the process. In order to maintain Zener breakdown, the Zener diode...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/56
CPCG05F1/561
Inventor 杨赟秀余丽波姚志健李坚袁菲
Owner SOUTH WEST INST OF TECHN PHYSICS
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