A kind of solar cell with high photoelectric conversion efficiency and preparation method thereof

A technology for photoelectric conversion efficiency and solar cells, applied in the field of solar cells, can solve the problems of complex fabrication of doped silicon layers, and achieve the effects of simple process, reducing total reflection of incident light, and increasing effective area

Active Publication Date: 2019-07-16
苏州瑞而美光电科技有限公司
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

Therefore, it is very complicated to make the doped silicon layer

Method used

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  • A kind of solar cell with high photoelectric conversion efficiency and preparation method thereof
  • A kind of solar cell with high photoelectric conversion efficiency and preparation method thereof
  • A kind of solar cell with high photoelectric conversion efficiency and preparation method thereof

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Embodiment

[0045] Such as figure 1 As shown, the high photoelectric conversion efficiency solar cell of the present invention comprises:

[0046] P-type doped semiconductor substrate 1, P-type doped semiconductor substrate has a first surface and a second surface opposite to the first surface; P-type doped semiconductor substrate is single crystal silicon, polycrystalline silicon, amorphous One of silicon, gallium arsenide, aluminum indium phosphide, cadmium sulfide, or cadmium antimonide.

[0047] A back electrode 2 is provided on the first surface of the P-type doped semiconductor substrate 1, and is in ohmic contact with the first surface;

[0048] A first convex tapered structure 11 is formed on the second surface of the P-type doped semiconductor substrate 1, such as figure 2 As shown, the first convex cone structure 11 is formed by patterning. The first convex cone structure 11 includes a plurality of convex cones 111 evenly distributed. 2 microns, the distance between the conv...

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Abstract

The invention discloses a solar cell with the high photoelectric conversion efficiency, and the solar cell comprises a P-type doped semiconductor substrate which is provided with a first surface and a second surface opposite to the first surface; a back electrode which is disposed on the first surface and achieves the ohmic contact with the first surface; a first convex-cone-shaped structure which is formed on the second surface through patterning processing; an N-type diffusion layer which is formed through phosphorus diffusion; a transparent grid electrode which is made of a conductive transparent material, is disposed on the N-type diffusion layer and achieves the ohmic contact with the N-type diffusion layer; and a transparent anti-reflection layer which is made of a transparent material. The transparent anti-reflection layer is provided with a positive electrode window region through etching, and the bottom of the positive electrode window region is connected with the upper surface layer of the transparent grid electrode. The positive electrode window region is provided with a positive electrode which achieves the ohmic contact with the transparent grid electrode. Through improving the surface rough structure of the substrate and the forming a micro-nano condensing lens structure on the transparent anti-reflection layer, the cell can greatly improve the photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to a solar cell, in particular to a solar cell with high photoelectric conversion efficiency and a preparation method thereof. Background technique [0002] In the future, as the energy crisis becomes increasingly prominent, human beings will develop and utilize new energy sources such as solar energy, which is an inexhaustible renewable energy source. In recent years, with the development of solar technology and the government's policy support, solar energy has become a new type of clean energy and has been widely popularized. [0003] However, how to improve the photoelectric conversion efficiency of solar cells has become a technical bottleneck commonly encountered in the industry, and many R&D personnel in the industry have devoted a lot of effort to it. [0004] In the prior art, since the surface of the doped silicon layer is a flat planar structure with a small surface area, the light-taking area of ​​the solar cell is sma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/0224H01L31/0236H01L31/18
CPCH01L31/02168H01L31/022466H01L31/022475H01L31/02366H01L31/0543H01L31/1804Y02E10/52Y02E10/547Y02P70/50
Inventor 王峰
Owner 苏州瑞而美光电科技有限公司
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