Vertical Power Transistor Based on Arc Drain Plate and Schottky Drain

Abstract

The invention discloses a vertical power transistor based on an arc leakage field plate and a Schottky drain electrode. The transistor comprises a substrate (1), a drift layer (2), an aperture layer (3), a blocking layer (4), a channel layer (6), a barrier layer (7) and a passivation layer (12). Two sides of the channel layer and the barrier layer are etched with grooves (8). Source electrodes (9) are deposited in the grooves of the two sides. A grid electrode (10) is deposited on the barrier layer between the source electrodes. An aperture (5) is formed between the blocking layers. A Schottky drain electrode (11) is deposited below the substrate. The passivation layer (12) wraps all the areas, except for a bottom of the Schottky drain electrode. Two sides of a back side of the passivation layer are etched with arc steps (13). Metal is deposited on the arc steps so as to form an arc field plate (14). The arc field plate is eclectically connected to the Schottky drain electrode and a lower portion is completely filled with a protective layer (15). In the invention, a reverse breakdown voltage is high, a technology is simple, a conduction resistance is small, a yield is high and the transistor can be used for a power electronics system.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular to a vertical power transistor based on an arc-shaped drain field plate and a Schottky drain, which can be used in a power electronic system. [0002] technical background [0003] Power semiconductor devices are the core components of power electronics technology. As energy and environmental issues become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. In the research of power devices, there is a serious restrictive relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this restrictive relationship is the key to improving the overall performance of the device. With the development of microelectronics technology, the performance...

AI Technical Summary

Problems solved by technology

However, the existing GaN-based current aperture heterojunction transistors all use ohmic drains. When a very low reverse voltage is applied to the drain of the device, the current blocking layer in the device will fail, resulting in a large drain-source leakage current. Moreover, as the reverse voltage of the drain increases, the gate of the device will also be turned on forwardly, and a large gate current will pass through it, which will eventually cause the device to fail.

Therefore, none of the existing GaN-based current aperture heterojunction transistors can realize the reverse blocking function. Even if the field plate structure is applied to the GaN-based current aperture heterojunction transistor, it will not improve the reverse blocking characteristics of the device. any effect

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