Semiconductor laser

Abstract

The invention discloses a semiconductor laser. The semiconductor laser comprises a bar, a fast axis collimator (FAC) mirror, a focusing lens group, a waveguide plate and an imaging lens, wherein the bar is used for providing an original laser beam; the FAC mirror is arranged on the surface of the bar, and is used for collimating the original laser beam to output quasi-parallel light beams; the focusing lens group is used for focusing the quasi-parallel light beams, and forming a focal point on a slow axis direction; the waveguide plate is positioned on the focal point, and is used for homogenizing the light beams to scatter and emit homogenized light beams; the imaging lens is used for focusing the homogenized light beams, and forming light spots along the slow axis. By adopting the semiconductor laser provided by the invention, the light spots are homogenized through an assembly along the slow axis, and energy returned by the light spots into a semiconductor laser cavity is lowered.

Description

technical field [0001] The present invention relates to a laser, more specifically to a semiconductor laser. Background technique [0002] High-power direct semiconductor lasers have been widely used in metal surface treatment, especially in laser cladding, laser quenching and other processes. Using semiconductor lasers has many advantages. For example, the spot size is generally rectangular, and it is easy to obtain a larger spot size. High electro-optical efficiency, low cost, high stability and reliability, so semiconductor laser is the first choice for laser surface treatment as light source. But there are still unsatisfactory places. Generally, semiconductor laser arrays are composed of multiple light-emitting points. After simple optical imaging and shaping, the total beam distribution is still strong and weak, and the distribution is not uniform enough. Usually, there are two problems in the processing of direct semiconductor laser beams; After the light beam is ref...

AI Technical Summary

Problems solved by technology

However, these two aspects have not been well solved in the existing products at present. The high-power cladding semiconductor directly outputs the laser, which often damages the light-emitting point during processing, resulting in a decrease in power and poor spot distribution uniformity. , in normal processing, it will also be found that the processing effect of the edge of the spot is quite different from the effect of the center area

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