A method for dry transfer of graphene on a metal substrate
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A metal substrate, dry transfer technology, applied in the direction of graphene, nano-carbon, etc., can solve problems such as unintentional doping, achieve the effect of reducing influence, high repeatability, and avoiding unintentional doping
Active Publication Date: 2019-03-01
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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[0005] In view of the above-mentioned shortcoming of the prior art, the object of the present invention is to provide a method for dry transfer of graphene on a metal substrate, which is used to solve the problem that graphene transfer in the prior art easily causes unintentional doping
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Embodiment 1
[0033] Such as Figure 1 to Figure 8 As shown, the present embodiment provides a method for dry transfer of graphene on a metal substrate, comprising steps:
[0034] Such as Figure 1 ~ Figure 4 As shown, at first step 1) S11 is carried out, the metal substrate 101 with graphene 102 is placed on the target substrate 103, and the graphene 102 faces the target substrate 103, wherein the metal substrate 101 does not infiltrate with graphene 102 after melting.
[0035] As an example, the graphene 102 includes one or a combination of graphene separated crystal domains and graphene continuous films. In this embodiment, the graphene 102 is a graphene continuous film.
[0036] As an example, the material of the metal substrate 101 includes one or an alloy of two or more of copper, nickel, cobalt and ruthenium. In this embodiment, the material of the metal substrate 101 is copper.
[0037] As an example, the melting point of the target substrate 103 is higher than that of the corr...
Embodiment 2
[0052] Such as Figure 1 to Figure 6 as well as Figure 9 As shown, the present embodiment provides a method for dry transfer of graphene on a metal substrate, and its basic steps are as in embodiment 1, wherein, in the present embodiment, transferring graphene on copper to a sapphire substrate by a dry method is Examples are further explained. Specifically, the following steps are included:
[0053] In step 1), the copper substrate with graphene is placed on the sapphire substrate, and the side with graphene is close to the target substrate.
[0054] In step 2), put the put metal substrate and the target substrate together into a common CVD growth system, evacuate to 1Pa, and then pass argon gas to normal pressure.
[0055] Step 3), under the protection of 1000sccm argon, 20sccm hydrogen, 0.1sccm methane mixed gas, the temperature is raised to 1200 degrees centigrade, and maintained for 30 minutes, and the heating rate is selected as 5 degrees centigrade / minute.
[0056] ...
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Abstract
The invention provides a method for transferring graphene on a metal substrate with a dry process. The method comprises the following steps: (1) a metal substrate on which graphene grows is placed on a target substrate, and the graphene surface is toward the target substrate; (2) the well placed metal substrate on which graphene grows and the target substrate are placed in a reactor, in a protective atmosphere, the reactor is heated to a melting temperature of the metal substrate or above, so that the metal substrate melts and shrinks into prills, the graphene is attached to the target substrate, after a preset insulation time, the reactor is reduced to a room temperature in the protective atmosphere, and the graphene is transferred to the target substrate. The method has high repeatability and is simple and easy to operate, and the method can be used for transferring graphene of high quality in large scale in batch in the fields of microelectronics and photoelectron; the transferring process belongs to physical process without assistance of other liquid state or solid state reagents, other impurities are not introduced into the transferring process, unintentional doping can be effectively avoided, and influence of the transferring process on electrical properties of the graphene is reduced.
Description
technical field [0001] The invention belongs to the technical field of graphene film preparation, in particular to a method for dry transfer of graphene on a metal substrate. Background technique [0002] Since two Russian-born scientists Andre Geim and Konstantin Novoselov published the first paper on graphene in 2004, graphene has stirred up huge waves in the scientific community, and its appearance is expected to trigger a new era in the field of modern electronic technology. revolution. Graphene has many superior properties, such as high light transmittance, high electron mobility, high current density, high mechanical strength, easy modification and so on. Because of these characteristics, it is recognized as an ideal material for manufacturing transparent conductive films, high-frequency transistors, hydrogen storage batteries, and even integrated circuits, and has broad market application prospects. [0003] So far, among many graphene preparation methods, the CVD m...
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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184
Inventor 张燕辉于广辉葛晓明张浩然陈志蓥隋妍萍邓荣轩
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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