Voltage-resistant terminal ring structure and power device

Abstract

The invention provides a voltage-resistant terminal ring structure and a power device. The voltage-resistant terminal ring structure comprises a substrate, multiple field rings, multiple field plates, dielectric films and at least one additional ion injection area; the field rings are arranged on the portion, close to a second surface, in the substrate at intervals, the conduction type of the field rings is opposite to that of the substrate, the field rings comprise at least one voltage-resistant ring and two equipotential rings, and the two equipotential rings are sequentially arranged in the direction far away from the voltage-resistant rings; the field plates and the field rings are arranged in a one-to-one corresponding mode, parallel segments corresponding to the voltage-resistant rings extend in the direction close to a third surface, and parallel segments corresponding to the equipotential rings extend in the direction far away from the third surface; the dielectric films are arranged on a second part surface and part of a first part surface; the additional ion injection areas are arranged on the portions, between the adjacent voltage-resistant rings and equipotential rings, of the substrate, and the conduction type of the additional ion injection areas is opposite to that of the substrate. The reverse breakdown voltage of the power device with the structure is stable.

Description

technical field [0001] The present application relates to the field of semiconductors, in particular, to a voltage-resistant terminal ring structure and a power device. Background technique [0002] With the development of power electronics technology, high-voltage power devices have become the core components in power electronics applications. [0003] figure 1 Shown is a typical existing voltage-resistant terminal ring structure of a high-voltage power device. It consists of a substrate 1', an internal field ring 2', a field plate 3' and a dielectric film 4', wherein the field ring 2' is composed of a pressure-resistant ring 21' and a stop ring 22' (equal potential ring, also known as the equipotential ring), this structure has very high requirements on the product manufacturing process, and is very sensitive to the charge existing in the product manufacturing process. That is to say, once mobile charges are introduced for any reason during processing, the breakdown vol...

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Problems solved by technology

[0007] The main purpose of this application is to provide a voltage-resistant terminal ring structure and power devices to solve the problem of unstable breakdown voltage of high-voltage power devices in the prior art

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