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Method of producing layered quantum dot LED backlight

A technology of LED backlight and manufacturing method, which is applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of complex production process of quantum dot LED backlight, low light conversion efficiency and color gamut value, and high cost, and achieve production Low cost, improved color gamut value, and the effect of preventing light decay

Active Publication Date: 2017-05-31
SHENZHEN JUFEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] For this reason, the technical problem to be solved by the present invention lies in that the existing quantum dot LED backlight has complex production process, high cost, low light conversion efficiency and low color gamut value, so as to propose an easy-to-manufacture, low-cost, high-yield, luminous effect How to make a good layered quantum dot LED backlight

Method used

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  • Method of producing layered quantum dot LED backlight
  • Method of producing layered quantum dot LED backlight

Examples

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Embodiment 1

[0031] The invention provides a method for manufacturing a layered quantum dot LED backlight, the method comprising the following steps:

[0032] a. Weigh 0.04g of luminescent material A, said luminescent material A is InAs, InN green light quantum dot fluorescent powder with emission wavelength of 542nm, wherein the mass of InAs quantum dot fluorescent powder is 0.02g, and weigh 0.04g of polyurethane The photocurable glue is added to the luminescent material A, and vacuum defoaming and stirring are carried out to obtain the quantum dot fluorescent glue A. The quantum dot fluorescent powder is in powder form, and it can also be in a solvent-dispersed form;

[0033] b. Coating the fluorescent glue A on the outer surface of the LED lens in the LED backlight, the thickness of the coated fluorescent glue A is 3 μm, and placing the LED lens coated with the fluorescent glue A in an ultraviolet curing furnace, at 230 nm irradiated with ultraviolet light for 3s to cure the fluorescent...

Embodiment 2

[0040] The invention provides a method for manufacturing a layered quantum dot LED backlight, the method comprising the following steps:

[0041] a. Weigh 0.13g of luminescent material A, said luminescent material A is a CdSe red light quantum dot fluorescent powder that emits light with a wavelength of 645nm, weigh 39g of epoxy-based photocurable glue and add it to said luminescent material A, and carry out vacuum defoaming and stirring , to obtain quantum dot fluorescent glue A, the quantum dot fluorescent powder is powdery, and it can also be solvent dispersed;

[0042] b. Coat the fluorescent glue A on the inner surface of the LED lens in the LED backlight. The thickness of the coated fluorescent glue A is 300 μm. 100s of ultraviolet light is irradiated to cure the fluorescent glue A;

[0043] c. Weigh 0.03g of luminescent material B, which is BaTiO with an emission wavelength of 540nm 3 , CsPbCl 3 , CsPbBr 3 Green light quantum dot silver powder, weigh 1.57g of silico...

Embodiment 3

[0049] The invention provides a method for manufacturing a layered quantum dot LED backlight, the method comprising the following steps:

[0050] a. Weigh 0.13g of luminescent material A, said luminescent material A is a CdSe red light quantum dot fluorescent powder that emits light with a wavelength of 645nm, weigh 39g of epoxy-based photocurable glue and add it to said luminescent material A, and carry out vacuum defoaming and stirring , to obtain quantum dot fluorescent glue A, the quantum dot fluorescent powder is powdery, and it can also be solvent dispersed;

[0051] b. Coat the fluorescent glue A on the inner surface of the LED lens in the LED backlight. The thickness of the coated fluorescent glue A is 300 μm. 100s of ultraviolet light is irradiated to cure the fluorescent glue A;

[0052] c. Weigh 0.03g of luminescent material B, which is BaTiO with an emission wavelength of 540nm 3 , CsPbCl 3 , CsPbBr 3 Green light quantum dot silver powder, weigh 1.57g of silico...

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Abstract

Disclosed in the invention is a method of producing a layered quantum dot LED backlight. Fluorescent glue A is produced and disposed on the surface of an LED lens; then fluorescent glue B is produced and disposed on the surface of the fluorescent glue A; and at last one layer of photocurable glue as a protective film is disposed on the fluorescent glue B, thus the layered LED lens is produced. The LED lens is fixed on an LED light strip. The light emitted by the LED light strip is mixed with the light emitted by the fluorescent glue A and fluorescent glue B so that white light is obtained. Compared with traditional backlight materials, a quantum dot material has a narrower half-wave width such that the color gamut value of the LED backlight is increased greatly. According to the producing method in the invention, the color gamut value of the LED backlight can reach 95% or more of NTSC standard. Moreover, the method is low-cost and simple. In the prior art, various kinds of fluorescent materials are mixed directly and react with each other, so that the structure of the quantum dot fluorescent material is destroyed and the light is attenuated. The layered fluorescent glue solves the above problems.

Description

technical field [0001] The invention belongs to the technical field of LED backlight sources, and relates to a method for manufacturing a quantum dot LED backlight source, in particular to a method for manufacturing a layered quantum dot LED backlight source. Background technique [0002] At present, most display devices realize image display by illuminating a liquid crystal screen through a backlight structure, and the luminous characteristics of the backlight directly affect the display image quality of the display device. In recent years, with the global energy crisis and the gradual enhancement of people's awareness of energy conservation and environmental protection, a large number of energy-saving and environmentally friendly materials have entered our lives. Among them, light-emitting diodes (LEDs) are gradually replacing traditional CCFL lighting materials and becoming a new generation of backlight materials due to their advantages of low energy consumption, low heat...

Claims

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Application Information

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IPC IPC(8): H01L33/50H01L33/54H01L33/58
CPCH01L33/504H01L33/505H01L33/507H01L33/54H01L33/58H01L2933/0041H01L2933/005H01L2933/0058H01L2224/48091H01L2924/181H01L2924/00014H01L2924/00012
Inventor 张志宽高丹鹏邢其彬王欣荣王旭改
Owner SHENZHEN JUFEI OPTOELECTRONICS
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