Light attenuation device

Abstract

The invention relates to a light attenuation device which comprises a heat insulation box body and a cell conveyor belt. The working section of the cell conveyor belt horizontally goes through the heat insulation box body. A plurality of light bulbs and gas ejector pipes are uniformly distributed above the working section of the cell conveyor belt in the heat insulation box body, and a heating device is arranged under the working section of the cell conveyor belt in the heat insulation box body. According to the device, a method of heating illumination is used to process a crystalline silicon solar cell. Under the premise of not damaging other performance of the crystalline silicon solar cell, an electrical performance attenuation problem is solved, and thus the efficiency of the cell is maintained at a high level. The device is simple and is easy to operate, and the device is suitable for assembly line production.

Description

technical field [0001] The invention relates to the technical field of solar cell manufacturing equipment, in particular to a light attenuation device. Background technique [0002] Crystalline silicon solar cells are the mainstream products in the current photovoltaic market. However, due to the introduction of impurities during the crystal growth process, the initial light on the cell will cause the dopant and impurities such as oxygen and iron to form a recombination center, thereby reducing the minority carrier lifetime of the silicon chip and causing a decrease in the conversion efficiency of the cell. light-induced attenuation. [0003] It is generally believed that the following methods can be used to solve the problem of light-induced attenuation: 1. Using the magnetic field Czochralski method (MCz method) that can reduce and control the oxygen content of single crystals; 2. Pulling single crystals by using zone melting single crystal (FZ) technology , 3. A crystal...

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Problems solved by technology

[0004] The general understanding of these four methods is that although the MCz method can control and reduce the oxygen content in the single crystal, it needs to configure magnetic field equipment and provide its excitation power, which will inevitably increase the cost

The FZ process can also avoid the inherent defect that a large amount of oxygen enters the silicon crystal in the Czochralski process, but the cost of the FZ process is relatively high, and it is mainly used for the manufacture of silicon wafers for ICs. To reduce costs, the FZ process must be modified.

In the third method, due to the segregation coefficient of gallium and indium, the resistivity of the single crystal along the head-to-tail axis changes too much, which affects the quality of the single crystal and is not conducive to industrial production.

The use of phosphorus-doped N-type single crystals will inevitably change the cell production process on a large scale, and the cost is also very high

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