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A kind of preparation method of cdse quantum dot

A technology of quantum dots and ionized water, applied in chemical instruments and methods, luminescent materials, electrolytic components, etc., can solve the problem of less CdSe quantum dot technology, and achieve the effects of short production cycle, simple operation, and convenient regulation

Active Publication Date: 2018-12-21
苏州昆道新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The present invention adopts cathodic reduction method to prepare CdSe quantum dot technology and there are few reports

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0009] Add 0.117 mol / L CdCl to the cathode tank of the electrolyzer 2 , 0.117 mol / L H 2 SeO 3 , 0.012 mol / LNa 2 h 2 For the mixed solution of Y and 0.012 mmol / L CTAB, add the mixed solution of 0.168 mol / L NaCl and 0.533 mol / L HCl in the anode tank. The two tanks are separated by a cation exchange membrane. In a water bath at room temperature, ITO was used as the cathode and the Pt sheet was used as the anode. A voltage of 2.0 V was applied and electrolyzed for 20 minutes. The ITO was taken out, rinsed with deionized water, and dried naturally to obtain the CdSe / ITO working electrode. Its photovoltage was tested to reach 0.2869 V.

Embodiment 2

[0011] Add 0.023 mol / L CdCl to the cathode tank of the electrolyzer 2 , 0.023 mol / L H 2 SeO 3 , 0.004 mol / LNa 2 h 2 For the mixed solution of Y and 0.134 mmol / L CTAB, add the mixed solution of 0.168 mol / L NaCl and 0.533 mol / L HCl in the anode tank. The two tanks are separated by a cation exchange membrane. In a water bath at room temperature, ITO was used as the cathode and the Pt sheet was used as the anode. A voltage of 2.8 V was applied and electrolyzed for 10 minutes. The ITO was taken out, rinsed with deionized water, and dried naturally to obtain the CdSe / ITO working electrode. Test its photovoltage to reach 0.2029V.

Embodiment 3

[0013] Add 0.07 mol / L CdCl to the cathode tank of the electrolyzer 2 , 0.07 mol / L H 2 SeO 3 , 0.008 mol / LNa 2 h 2 For the mixed solution of Y and 0.073 mmol / L CTAB, add the mixed solution of 0.216 mol / L NaCl and 0.533 mol / L HCl in the anode tank. The two tanks are separated by a cation exchange membrane. In a water bath at room temperature, ITO was used as the cathode and the Pt sheet was used as the anode. A voltage of 2.4 V was applied and electrolyzed for 15 minutes. The ITO was taken out, rinsed with deionized water, and dried naturally to obtain the CdSe / ITO working electrode. Test its photovoltage to reach 0.4112V.

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Abstract

The invention discloses a CdSe quantum dot preparation method. Cathode liquor is formed by mixing 0.023-0.211 mol / L of CdCl2, 0.023-0.211 mol / L of H2SeO3, 0-0.016 mol / L of Na2H2Y and 0.012-0.134 mmol / L of cetyl trimethyl ammonium bromide. Anode liquor is formed by mixing 0.075-0.448 mol / L of NaCl and 0.533 mol / L of HCl. In a normal-temperature water bath, ITO serves as a cathode, a Pt plate serves as an anode, voltage of 1.6-3.2 V is applied, electrolysis is conducted for 5-25 minutes, and a CdSe quantum dot is obtained on the ITO. The CdSe quantum dot preparation method can prepare the CdSe quantum dot which is small in size, high in density and good in stability and photoelectric property. The whole preparation process is simple, short in period and low in cost.

Description

technical field [0001] The invention relates to a preparation method of CdSe quantum dots. Background technique [0002] CdSe is a direct transition wide bandgap II-IV compound N-type semiconductor, which is gray-brown or red at room temperature. Compared with other compound semiconductor materials, CdSe material has a direct transition energy gap (E g =1.7 eV) wide, good visible light response, and excellent nonlinear optical properties, etc., so it has unique optical properties and photoelectric conversion properties. Studies in recent years have shown that CdSe quantum dot materials have adjustable band gap, simple preparation process, high quantum yield, good stability (core-shell structure), and their luminous range can almost cover the entire visible light region. great potential value. At present, the methods for preparing CdSe quantum dots include template method, sol-gel method, hydrothermal method, colloid chemical synthesis method, electrochemical deposition met...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25B1/00C09K11/88B82Y20/00B82Y40/00
CPCB82Y20/00B82Y40/00C09K11/883C25B1/00
Inventor 江瑶瑶钟福新高云鹏黎燕莫德清
Owner 苏州昆道新材料科技有限公司
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