Infrared detector with microbridge structure and production method thereof

Abstract

The invention provides an infrared detector with microbridge structures and a production method thereof. The infrared detector comprises a base, wherein metal interconnection layers are formed in the surface of the base; the graphical microbridge structures which are partially suspended above the base, wherein the microbridge structures comprises bridge legs and bridge beams, the support beams are electrically connected with the metal interconnection layers, and the bridge beams are suspended and tilt upwards; and graphical infrared sensitive layers which are partially suspended above the microbridge structures, wherein the infrared sensitive layers are electrically connected with the bridge beams of the microbridge structures and are supported by the bridge beams. The yield of the infrared detector is improved and the relatively high performance is achieved.

Description

technical field [0001] The invention relates to the technical field of infrared detectors, in particular to an infrared detector with a micro-bridge structure and a manufacturing method thereof. Background technique [0002] Micro-Electro-Mechanical Systems (MEMS) is a technology used to realize tiny integrated devices or systems. It is manufactured using integrated circuit or MEMS proprietary batch processes, with device or system dimensions ranging from a few microns to a few millimeters. These devices (or systems) are capable of sensing, controlling, and actuating microscale structures and producing effects at the macroscale. In the past ten years, MEMS products have been widely used in all aspects of people's daily life, including accelerometers of automobile airbags, pressure sensors, micro-microphones on smart electronic products, gyroscopes, inkjet print heads and uncooled infrared detectors Wait. MEMS products generally include two parts: IC processing circuit and...

AI Technical Summary

Problems solved by technology

In the process of the infrared detector with double sacrificial layers, the surface structure of the uppermost infrared absorbing layer is complicated due to the structure of two layers of through holes. After the sacrificial layer is released, it is easy to cause the upper and lower layers to contact at the through holes, and finally lead to thermal insulation of the microbridge. failure, lower yield

[0005] Therefore, the existing infrared detector structure and manufacturing process need to be further improved

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