Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

MEMS infrared light source and manufacturing method thereof

A technology of infrared light source and manufacturing method, which is applied in the field of infrared light source, can solve problems such as poor linearity and large influence, and achieve the effects of improving measurement linearity, avoiding external environmental influences, and improving detection accuracy

Active Publication Date: 2017-05-10
锐立平芯微电子(广州)有限责任公司
View PDF5 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of this, the present invention provides a MEMS infrared light source and its manufacturing method to solve the problem of poor linearity and large influence by the external environment when the infrared light source integrates the temperature sensor on the chip of the infrared light source in the prior art. The problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MEMS infrared light source and manufacturing method thereof
  • MEMS infrared light source and manufacturing method thereof
  • MEMS infrared light source and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0018] An infrared light source provided in the prior art, a patterned first metal film is made on the support film as a temperature sensor, and two points distributed at both ends are used as output lead points; a patterned second metal film is made on the insulating layer As a heating source, the two points distributed up and down serve as connection points. The infrared light source provided in the prior art utilizes the temperature sensing properties of th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an MEMS infrared light source and a manufacturing method thereof. The MEMS infrared light source comprises a substrate, a supporting layer, a first thermistor layer, a dielectric layer, a second thermistor layer, an isolation and protection layer, a heating resistance layer and a radiation layer. In the MEMS infrared light source disclosed by the invention, one thermistor layer in the first thermistor layer and the second thermistor layer is used as a temperature sensor to directly measure the temperature change of a radiation area of the MEMS infrared light source through the resistance change of the thermistor layer at the outside; the other thermistor layer is used as temperature compensation performance to counteract the error generated by temperature excursion in a peripheral compensation circuit within a certain temperature range, namely the MEMS infrared light source provided by the invention can perform real-time temperature compensation while monitoring the temperature offset in real time, thereby improving the measurement linearity of the MEMS infrared light source and avoiding the influence by the external environment. The manufacturing method is convenient to be compatible with an internal chip process of the infrared light source, and the process difficulty is reduced.

Description

technical field [0001] The invention relates to the technical field of infrared light sources, in particular to a MEMS (Micro Electro Mechanical Systems, Micro Electro Mechanical Systems) infrared light source and a manufacturing method thereof. Background technique [0002] Infrared technology is widely used in national defense, information technology and communication, pollution monitoring, temperature control, medicine and other fields. As an important part of the application of infrared technology, the research of infrared light source has received more and more attention. An important application of infrared light sources is infrared gas sensors. [0003] At present, MEMS infrared light sources are widely used in NDIR (non-dispersive in fra-red, non-dispersive infrared) systems, heating the black body radiation layer by heating the Joule heat generated by the heating resistor, so that the black body radiation layer emits thermal radiation infrared light, infrared When...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B81B7/00B81B7/02B81C1/00
CPCB81B7/0019B81B7/0087B81B7/02B81C1/00349
Inventor 明安杰刘卫兵孙西龙王玮冰陈大鹏
Owner 锐立平芯微电子(广州)有限责任公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com