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Semiconductor device and preparation method thereof

A technology of semiconductors and devices, which is applied in the field of semiconductor chip manufacturing technology, and can solve problems such as metals are easy to fall off

Active Publication Date: 2017-03-29
FOUNDER MICROELECTRONICS INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0020] The invention provides a semiconductor device and its preparation method, which is used to solve the technical problem that the metal is easy to fall off due to the stress mismatch between the dielectric layer and the metal layer when the annealing process is performed in the process of preparing the semiconductor device in the prior art

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  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof
  • Semiconductor device and preparation method thereof

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Embodiment 1

[0083] A method for preparing a GaN semiconductor device provided in Embodiment 1 of the present invention specifically includes:

[0084] see Figure 15 , the buffer layer 22 and the barrier layer 23 are sequentially prepared on the upper surface of the polysilicon semiconductor substrate 21 by processes such as deposition.

[0085] Wherein, the above-mentioned buffer layer 22 covers the upper surface of the semiconductor substrate 21, and the barrier layer 23 covers the upper surface of the above-mentioned buffer layer 22, so that the above-mentioned semiconductor substrate 21, the buffer layer 22 and the barrier layer 23 can be used as the subsequent preparation of the semiconductor substrate. the substrate of the device.

[0086] The buffer layer 22 can be made of gallium nitride (GaN) and the barrier layer 23 can be made of aluminum gallium nitride (AlGaN).

[0087] The buffer layer 22 has a thickness of about 675 μm, and the barrier layer 23 has a thickness of about 20...

Embodiment 2

[0112] A method for preparing a semiconductor device provided in Embodiment 2 of the present invention specifically includes:

[0113] see Figure 29 , the buffer layer 32 and the barrier layer 33 are sequentially prepared on the upper surface of the polysilicon semiconductor substrate 31 by processes such as deposition.

[0114] Wherein, the above-mentioned buffer layer 32 covers the upper surface of the semiconductor substrate 31, and the barrier layer 33 covers the upper surface of the above-mentioned buffer layer 32, so that the above-mentioned semiconductor substrate 31, buffer layer 32 and barrier layer 33 can be used as the subsequent preparation of GaN Substrates for semiconductor devices.

[0115] The buffer layer 32 may be made of gallium nitride (GaN), and the barrier layer 33 may be made of aluminum gallium nitride (AlGaN).

[0116] The buffer layer 32 has a thickness of about 675 μm, and the barrier layer 33 has a thickness of about 200A to 300A.

[0117] see ...

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Abstract

The invention discloses a semiconductor device and a preparation method thereof. The preparation method comprises the following steps: providing a semiconductor substrate; forming a dielectric layer and a stress buffer layer on the semiconductor substrate in turn; etching the dielectric layer and the stress buffer layer; depositing a first metal layer; etching the first metal layer, and then carrying out an annealing process; and preparing a passivation layer on the first metal layer to form a semiconductor device. The stress coefficient of the stress buffer layer is between the stress coefficient of the first metal layer and the stress coefficient of the dielectric layer. It is observed that the stress buffer layer is arranged between the first metal layer and the dielectric layer. As the stress coefficient of the stress buffer layer is between the stress coefficient of the first metal layer and the stress coefficient of the dielectric layer, the stress buffer layer can effectively buffer the stress difference produced between the first metal layer and the dielectric layer in the annealing process. Therefore, defects such as metal loss caused by annealing can be avoided effectively, and the yield and performance of the semiconductor device are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor chip manufacturing technology, in particular to a semiconductor device and a preparation method thereof. Background technique [0002] The third-generation wide bandgap semiconductors represented by gallium nitride GaN have excellent characteristics such as large bandgap width, high critical field strength, high thermal conductivity, and high carrier saturation rate, making them attract people's attention. In addition, because GaN semiconductor devices have fast switching speed, high field strength, and good thermal characteristics, they also have good development prospects in the power rectifier market. [0003] A traditional method for preparing a gallium nitride GaN semiconductor device may include the following steps: [0004] see figure 1 , growing a buffer layer 12 and a barrier layer 13 sequentially on the upper surface of the polysilicon semiconductor substrate 11 . [0005] see ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78
Inventor 陈建国康冬亮刘蓬
Owner FOUNDER MICROELECTRONICS INT
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