Solar cell positive grid wire, solar cell and manufacturing method thereof
A solar cell and positive electrode technology, applied in the field of solar cells, can solve the problems of immature process stability, easy disconnection, binding force, and easy existence, etc., achieve high photoelectric conversion efficiency, overcome easy oxidation, and improve production efficiency.
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Embodiment 1
[0051] This embodiment is used to illustrate the solar cell anode grid wire and solar cell electrode and the manufacturing method thereof provided by the present invention.
[0052] Spin-coat the metal paste (the metal paste is formed by mixing tetraisopropyl titanate, nickel acetylacetonate, ethyl maltol and solvent ethanol at a weight ratio of 0.20:0.05:0.36:1) onto the solar cell Silicon wafer (specification: 156cm 2 ×156cm 2 , the thickness is 180 μm, the same below), and then cover the mask on the surface of the solar cell silicon wafer coated with metal paste, the mask includes a light-transmitting area and an opaque area and the light-transmitting area The pattern is the positive grid line pattern, and then UV exposure, the exposure energy is 2000mj / cm 2, wherein, since the pattern of the light-transmitting region of the mask is a positive grid line pattern, the UV-exposed part is a positive grid line pattern. Afterwards, the mask is removed, and the solar cell silic...
Embodiment 2
[0060] This embodiment is used to illustrate the solar cell anode grid wire and solar cell electrode and the manufacturing method thereof provided by the present invention.
[0061] Spin-coat the metal paste (the metal paste is formed by mixing tetraisopropyl titanate, nickel acetylacetonate, ethyl maltol, and solvent ethyl acetate in a weight ratio of 0.20:0.05:0.31:1) onto On the front side of the silicon wafer of the solar cell, a mask is covered on the surface of the silicon wafer of the solar cell coated with the metal paste, the mask includes a light-transmitting area and an opaque area and the pattern of the light-transmitting area is positive Grid pattern, then UV exposure, exposure energy is 2000mj / cm 2 , wherein, since the pattern of the light-transmitting region of the mask is a positive grid line pattern, the UV-exposed part is a positive grid line pattern. Afterwards, the mask is removed, and the solar cell silicon wafer treated by UV exposure is treated with a t...
Embodiment 3
[0069] This embodiment is used to illustrate the solar cell anode grid wire and solar cell electrode and the manufacturing method thereof provided by the present invention.
[0070] Spin-coat the metal paste (the metal paste is formed by mixing tetraisopropyl titanate with nickel acetate, ethyl maltol, and solvent ethanol at a weight ratio of 0.2:0.05:0.34:1) onto the solar cell silicon On the front side of the sheet, and then cover the mask on the surface of the silicon wafer of the solar cell coated with the metal paste, the mask includes a light-transmitting area and an opaque area and the pattern of the light-transmitting area is a positive grid pattern , and then UV exposure, the exposure energy is 2000mj / cm 2 , wherein, since the pattern of the light-transmitting region of the mask is a positive grid line pattern, the UV-exposed part is a positive grid line pattern. Afterwards, the mask is removed, and the solar cell silicon wafer treated with UV exposure is treated wit...
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