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Method for preparing hexagonal spiral morphology bismuth telluride thermoelectric thin film

A technology of thermoelectric thin film and bismuth telluride, which is applied in the direction of thermoelectric device node lead wire material, ion implantation plating, coating, etc., can solve the problems of single shape of thermoelectric thin film material and poor thermoelectric performance, and achieve low thermal conductivity , high power factor, performance improvement effect

Inactive Publication Date: 2017-03-15
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the invention is to overcome existing magnetron sputtering method and prepare Bi 2 Te 3 The thermoelectric thin film material has the disadvantages of single morphology and poor thermoelectric performance, and provides a method for preparing hexagonal helical bismuth telluride thermoelectric thin film

Method used

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  • Method for preparing hexagonal spiral morphology bismuth telluride thermoelectric thin film
  • Method for preparing hexagonal spiral morphology bismuth telluride thermoelectric thin film
  • Method for preparing hexagonal spiral morphology bismuth telluride thermoelectric thin film

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Embodiment 1

[0029] (1) Before starting the preparation, clean the cavity of the magnetron sputtering equipment, and wipe the target head, shield cover and other parts with acetone;

[0030] (2) Mix the metal powder Bi with a purity of 99.999% and the metal powder Te with a purity of 99.999% according to the molar ratio of Bi:Te=2:3, and use a hot isostatic pressing device under the condition of 200MPa to make a size of Φ75mm ×5mm bismuth telluride alloy target, and install the bismuth telluride alloy target on the target head connected to the DC source in the magnetron sputtering chamber;

[0031] (3) The metal powder Te with a purity of 99.999% is used under the condition of 150MPa to make a tellurium simple substance target with a size of Φ75mm×5mm by using a hot isostatic pressing device, and the tellurium simple substance target is installed in the magnetron sputtering chamber and On the target head connected to the RF source;

[0032] (4) Place the quartz glass sheet as the substrate ...

Embodiment 2

[0043] (1) Before starting the preparation, clean the cavity of the magnetron sputtering equipment, and wipe the target head, shield cover and other parts with acetone;

[0044] (2) Mix the metal powder Bi with a purity of 99.999% and the metal powder Te with a purity of 99.999% according to the molar ratio of Bi:Te=2:3, and use a hot isostatic pressing device under the condition of 200MPa to make a size of Φ75mm ×5mm high-density bismuth telluride alloy target, and install the bismuth telluride alloy target on the target head connected to the DC source in the magnetron sputtering chamber;

[0045] (3) The metal powder Te with a purity of 99.999% is used under the condition of 150MPa to make a high-density tellurium simple substance target with a size of Φ75mm×5mm by using a hot isostatic pressing device, and the tellurium simple substance target is installed on the magnetron sputtering On the target head connected to the radio frequency source in the chamber;

[0046] (4) Pl...

Embodiment 3

[0057] (1) Before starting the preparation, clean the cavity of the magnetron sputtering equipment, and wipe the target head, shield cover and other parts with acetone;

[0058] (2) Mix the metal powder Bi with a purity of 99.999% and the metal powder Te with a purity of 99.999% according to the molar ratio of Bi:Te=2:3, and use a hot isostatic pressing device under the condition of 200MPa to make a size of Φ75mm ×5mm high-density bismuth telluride alloy target, and install the bismuth telluride alloy target on the target head connected to the DC source in the magnetron sputtering chamber;

[0059] (3) The metal powder Te with a purity of 99.999% is used under the condition of 150MPa to make a high-density tellurium simple substance target with a size of Φ75mm×5mm by using a hot isostatic pressing device, and the tellurium simple substance target is installed on the magnetron sputtering On the target head connected to the radio frequency source in the chamber;

[0060] (4) Pl...

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Abstract

The invention discloses a method for preparing a hexagonal spiral morphology bismuth telluride thermoelectric thin film. The bismuth telluride thermoelectric thin film is prepared through a magnetron sputtering method. The method comprises the steps that firstly, a cavity of magnetron sputtering equipment is cleaned, a bismuth telluride (Bi2Te3) alloy target and a tellurium (Te) simple substance target are installed, and a cleaned quartz glass substrate is fixed to a base; secondly, the distance between the bismuth telluride alloy target and the quartz glass substrate is adjusted to be 100-120 mm, the distance between the tellurium simple substance target and the quartz glass substrate is adjusted to be 130-140 mm, and vacuum is pumped to be 5*10<-4>-7.5*10<-4> Pa; thirdly, the quartz glass substrate is heated to 300-400 DEG C, argon (Ar) is injected, under the condition that the working air pressure is 0.3-0.5 Pa, a direct current source and a radio source are opened, the power of the direct current source is set to be 18 W, the power of the radio source is set to be 18-20 W, and film coating is started through co-sputtering; and finally, a sputtered thin film is subjected to annealing treatment at the temperature of 250-350 DEG C, and the hexagonal spiral morphology bismuth telluride thermoelectric thin film is formed.

Description

technical field [0001] The invention relates to a method for preparing a thermoelectric functional thin film, in particular to a method for preparing a bismuth telluride thermoelectric thin film with a hexagonal spiral shape. Background technique [0002] The energy issue is one of the great challenges faced by human beings in the 21st century, and economic development is closely related to the sustainable utilization of energy. Traditional fossil energy represented by petroleum and coal has limited reserves, and its extensive use has brought various environmental problems (water pollution, air pollution, etc.), posing a great threat to people's health. At present, the use of some new energy sources is undoubtedly an effective way to solve the problems caused by fossil energy, such as solar energy, wind energy, ocean energy, etc., which are not only green and environmentally friendly energy, but also inexhaustible. As a very competitive energy storage medium, thermoelectric...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06H01L35/16
CPCC23C14/0623C23C14/352H10N10/852
Inventor 商红静丁发柱古宏伟张慧亮董泽斌屈飞张贺
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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