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High-strength high-silicon aluminum alloy containing trace rare earth and preparation method thereof and application

A high-silicon aluminum alloy and rare earth technology, applied in the field of functional material development, can solve the problems of silicon-aluminum alloy composition segregation, low comprehensive performance, easy generation of holes, etc. Effect

Active Publication Date: 2017-02-22
长沙博朗思达金属材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As we all know, the as-cast silicon-aluminum alloy has serious composition segregation, coarse silicon phase, easy to produce holes, and its comprehensive performance is lower than that of silicon-aluminum alloy prepared by rapid solidification method, so it is rarely used as an electronic packaging material.

Method used

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  • High-strength high-silicon aluminum alloy containing trace rare earth and preparation method thereof and application
  • High-strength high-silicon aluminum alloy containing trace rare earth and preparation method thereof and application
  • High-strength high-silicon aluminum alloy containing trace rare earth and preparation method thereof and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Prepare Al-50Si-0.4Sc silicon aluminum alloy.

[0044] 1) The raw material is single crystal silicon, high-purity aluminum (99.998~99.999% Al), and Al-Sc alloy with 2% Sc content. The alloying elements are mixed in the following proportions: silicon: 50%, scandium: 0.4%, the balance For aluminum.

[0045] 2) Raise the high-purity aluminum ingot to 850°C. After the aluminum ingots are all melted, the temperature is raised to 1300°C, and then the monocrystalline silicon is added in batches. When the monocrystalline silicon is all melted and cooled to 760°C, the Al-Sc master alloy is added. Stir for 5 minutes, cover the slagging with 30% NaCl+47% KCl+23% cryolite, and degas with hexachlorohexane, let it stand for 10 minutes, pour the melt into a tundish with a preheating temperature of 950℃, and open it at the same time High-pressure nitrogen gas, an atomization pressure of 1.2 MPa, and a receiving distance of the deposition disk 630 mm, to obtain a deposition ingot with a dia...

Embodiment 2

[0058] Prepare Al-50Si-0.4Zr silicon aluminum alloy.

[0059] 1) The raw material is single crystal silicon, high-purity aluminum (99.998~99.999% Al), and Al-Zr alloy with a Zr content of 10%. The alloying elements are proportioned as follows: silicon: 50%, zirconium: 0.4%, the balance For aluminum.

[0060] 2) Raise the high-purity aluminum ingot to 850°C. After the aluminum ingots are all melted, the temperature is raised to 1300°C, and then the monocrystalline silicon is added in batches. After the monocrystalline silicon is all melted and cooled to 760°C, the Al-Zr master alloy is added. Stir for 5 minutes, cover the slagging with 30% NaCl+47% KCl+23% cryolite, and degas with hexachlorohexane, let it stand for 10 minutes, pour the melt into a tundish with a preheating temperature of 950℃, and open it at the same time High-pressure nitrogen gas, an atomization pressure of 1.2 MPa, and a receiving distance of the deposition disk 630 mm, to obtain a deposition ingot with a diamet...

Embodiment 3

[0065] Prepare Al-50Si-0.2Sc-0.4Zr silicon aluminum alloy.

[0066] 1) The raw materials are single crystal silicon, high-purity aluminum (99.998~99.999% Al), Al-Sc alloy with 2% Sc content, and Al-Zr alloy with 10% Zr content. The alloying elements are mixed in the following proportions: Silicon : 50%, scandium: 0.2%, zirconium: 0.4%, the balance is aluminum.

[0067] 2) The high-purity aluminum ingot is heated to 850°C, after the aluminum ingots are all melted, the temperature is raised to 1300°C, monocrystalline silicon is added in batches, and the temperature is reduced to 760°C after all the monocrystalline silicon is melted, and the Al-Sc master alloy and Al-Zr master alloy, fully stirred for 5min, covered slagging with 30%NaCl+47%KCl+23% cryolite, and degassed with hexachlorohexane, let stand for 10min, pour the melt into the preheating temperature of 950℃ In the tundish, the high-pressure nitrogen was turned on at the same time, the atomization pressure was 1.2MPa, the rec...

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Abstract

The invention relates to a high-strength high-silicon aluminum alloy containing trace rare earth and a preparation method thereof and an application, and belongs to the technical field of functional materials. The alloy involved in the invention is prepared from, by mass percent, 48.0-52.0% of silicon, 0.1-0.9% of rare earth X, and the rest of aluminum, wherein X is Sc or Zr. According to the invention, a billet is prepared by using an ultrasound atomizing spraying sedimentation method, and then the deposited billet is compacted and thermally treated, the obtained silicon aluminum alloy tissue is uniform and free from hole; the compaction degree is 99.9% above, the silicon grain is round and fine, and its size is less than 10 miu m. The composite material designed in the invention has outstanding physical performance, low manufacturing cost, and is applicable to the large-scale industrial production.

Description

Technical field [0001] The invention relates to a high-strength and high-silicon aluminum alloy containing trace rare earths and a preparation method and application thereof, and belongs to the technical field of functional material development. [0002] technical background [0003] In recent years, with the increase in the complexity, density and integration of electronic components, the power of chips has become larger and the heat dissipation requirements have become higher and higher. Traditional packaging shell materials such as Invaor and Kovar alloys, tungsten Copper, molybdenum and copper have been unable to meet the needs of the rapid development of electronic technology. As a new generation of electronic packaging materials, silicon aluminum alloy has the characteristics of low density, high thermal conductivity, low thermal expansion coefficient, excellent mechanical properties and machinability, and has been applied in the field of electronic packaging. [0004] One of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C21/02C22C30/00C22C1/03C22C1/06C22F1/043B22F3/115B22F3/15
CPCB22F3/115B22F3/15C22C1/026C22C1/03C22C1/06C22C21/02C22C30/00C22F1/002C22F1/043
Inventor 王日初
Owner 长沙博朗思达金属材料有限公司
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