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Magnetic sensor array integrated structure and making method thereof

A magnetic sensor and array technology, applied in the field of magnetic sensors, can solve the problems of reducing device range and application limitations, and achieve the effects of small attenuation, wide measurement range, and high measurement accuracy

Active Publication Date: 2017-02-15
NO 719 RES INST CHINA SHIPBUILDING IND
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  • Abstract
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  • Claims
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Problems solved by technology

Although it is possible for such components to achieve measurement accuracy down to the nT level, it is usually necessary to optimize the measurement accuracy during device structure design at the cost of reducing the range, so its application is often limited
For example: in GMR devices, the magnetoresistance gain under weak magnetic field can be enhanced by increasing the thickness of the non-magnetic layer, but at the same time, the measuring range of the device is also greatly reduced

Method used

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  • Magnetic sensor array integrated structure and making method thereof
  • Magnetic sensor array integrated structure and making method thereof
  • Magnetic sensor array integrated structure and making method thereof

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Embodiment Construction

[0033] Exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.

[0034] The following description of the exemplary embodiments is merely illustrative in nature and in no way taken as any limitation of the invention and its application or uses. Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods and devices should be considered part of the description.

[0035] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:

[0036] The invention provides an integrated structure of a magnetic sensor array, ...

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Abstract

The invention discloses a magnetic sensor array integrated structure and a making method thereof. The magnetic sensor array is composed of a bias magnet, a bulk acoustic resonator array chip, chip pins, a ceramic package base, a magnetic fluid, and a glass cover sheet. The bulk acoustic resonator array chip comprises a silicon substrate, a Prague acoustic reflection layer, a bottom electrode, a piezoelectric film layer, a top electrode, via filler, and electrode pads. According to the magnetic sensor array provided by the invention, the magnetic measurement mechanism of detection of the rheological response of the magnetic fluid to an external magnetic field under a saturated bias field by use of high-frequency shear wave is put forward for the first time, wide response range of the magnetic fluid and high resolution and high degree of integration of a thickness shear wave type bulk acoustic resonator are fully utilized, a high-precision and wide-range novel magnetic sensor array is realized, and the technical requirements of weak magnetic field imaging for the magnetic sensor array can be met effectively.

Description

technical field [0001] The present invention relates to a magnetic sensor, in particular to a magnetic sensor array integrated structure based on the magnetofluid acoustic loading effect, which is suitable for weak biological magnetic field detection and imaging, high-resolution magnetic field flaw detection and other fields. Background technique [0002] Magnetic sensor arrays with high resolution and wide range have great application prospects in biomedical magnetic imaging and diagnosis, nondestructive magnetic flaw detection, etc. Due to the limitation of element size, most of the cell structures currently used to construct magnetic sensor arrays are based on Hall effect, magnetoresistance effect (GMR, AMR) or magnetic tunnel junction (MTJ) effect. Although it is possible for such components to achieve measurement accuracy down to the nT level, it is usually necessary to optimize the measurement accuracy during the design of the device structure at the cost of reducing t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/02
CPCG01R33/02
Inventor 闻心怡廖庆斌尤晓健陈梦珂姚蓉马剑陈刚
Owner NO 719 RES INST CHINA SHIPBUILDING IND
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