Pallet boss for etching sapphire substrate and control method

Abstract

The invention discloses a pallet boss for etching a sapphire substrate and a control method. The pallet boss comprises a pallet boss with cooling holes, and the upper end face of the pallet boss is of an inverted cone shaped recessing structure. The apex of the inverted cone shaped recessing structure is the lowest point of the recessing structure, and the horizontal distance between the lowest point of the recessing structure and the upper end face of the pallet boss is 10-40 micrometers. The pallet boss can effectively improve the temperature in every position in a sapphire wafer, thereby improving intra-sheet uniformity of an inductively coupled plasma etched sapphire substrates.

Description

technical field [0001] The invention relates to the technical field of sapphire substrate etching, in particular to a tray boss used for sapphire substrate etching. Background technique [0002] The patterned substrate is formed on the substrate by wet high-temperature etching or inductively coupled plasma etching (ICP). Graphics and other microstructures. This kind of microstructure has a diffuse reflection effect on light waves, which can increase the escape probability of photons, thereby improving the luminous brightness of LEDs. The regular microstructure on the substrate will have a certain positive effect on the growth of the substrate, improving the uniformity of the product and the utilization rate of the patterned sapphire substrate. Now the patterned sapphire substrate is basically made by the inductively coupled plasma etching (ICP) method, because the etching loading tool is window-like figure 1 As shown, and the large area of ​​sapphire will produce uneven e...

AI Technical Summary

Problems solved by technology

Now the patterned sapphire substrate is basically made by the inductively coupled plasma etching (ICP) method, because the etching loading tool is window-like figure 1 As shown, and the large area of ​​sapphire will produce uneven etching morphology due to inconsistent plasma intensity in the dry etching process, so the size and morphology of the etching tray can be purposefully changed to more effectively Under the premise of improving the uniformity of epitaxial growth at the back end of the substrate and the utilization rate of the patterned sapphire substrate, improving the uniformity of the patterned sapphire substrate has become a research direction in the industry

[0003] In order to improve the intra-chip uniformity of the patterned sapphire substrate, the end surface of the existing tray boss is a neat planar structure. After the sapphire is placed on the tray boss, it is fixed by the cover plate pressing claw. There is no gap between them, so there will be slight deformation after pressing the claws through the cover plate, causing the center of the sapphire wafer to warp upwards, so that in the ICP reaction chamber, the plasma etching intensity of each area in the sapphire wafer is the same as that of the sapphire wafer The temperature difference of each part causes unevenness in the etched wafer

Images