Far-end plasma reinforced chemical vapor deposition device

Abstract

The invention discloses a far-end plasma reinforced chemical vapor deposition device and relates to the technical field of film preparation. The far-end plasma reinforced chemical vapor deposition device comprises a reaction chamber and a far-end plasma generation chamber communicating with the reaction chamber. A processing gas inlet is formed in the far-end plasma generation chamber. A byproduct exhaust port is formed in the reaction chamber. A platform is arranged in the reaction chamber. A substrate is placed on the platform surface of the platform. A direct-current discharging unit, a radio frequency discharging unit and a microwave discharging unit are simultaneously arranged in the far-end plasma generation chamber in an isolated mode. The direct-current discharging unit, the radio frequency discharging unit and the microwave discharging unit discharge synchronously so that the processing gas in the far-end plasma generation chamber can form plasma, and then the plasma is injected into the reaction chamber. Through the far-end plasma generation chamber, a plasma source meeting requirements is generated, the plasma density can be effectively controlled, the defect that the density of the formed plasma is low or space distribution is uneven is overcome, and the using efficiency and the processing efficiency of the far-end plasma reinforced chemical vapor deposition device are improved.

Description

technical field [0001] The invention relates to the technical field of film preparation, in particular to a remote plasma enhanced chemical vapor deposition device. Background technique [0002] Chemical Vapor Deposition (CVD, Chemical Vapor Deposition) is to introduce the source material (or reaction source, film precursor) into the reaction chamber in the form of gas (or process gas), through oxidation, reduction or reaction with the surface of the substrate A chemical reaction is carried out, and its products are deposited on the surface of the substrate by internal diffusion to form a thin film. [0003] Plasma has been widely used in various fields. For example, in the manufacture of semiconductor integrated circuits, the growth of thin films of different materials or the etching of circuits are generally realized by plasma technology. The reactants in the plasma are ions or free radicals with high chemical activity, and the surface of the substrate will also have high...

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Problems solved by technology

However, the plasma generation chamber in the existing remote PECVD has the following disadvantages: one is that, for a practically operable remote PECVD system, the plasma generation method adopted by the plasma generation device has been pre-defined , that is, the plasma generating device is often limited to one of direct current (DC) discharge, radio frequency (RF) discharge, or microwave discharge. Due to the different discharge characteristics of each discharge unit, the process gas, source material (or film prior matter) ) or deposition materials and the thin films deposited therefrom are also relatively limited, that is to say, the plasma generation device cannot be applied to deposition materials of different families; the second is that the plasma generation devices in the existing remote PECVD system are generally There is only one process gas inlet, which relatively limits the types of source materials (or film precursors, reaction sources) or process gases, so that only one layer of deposition material can be produced in one deposition process, which relatively reduces the distance. The process efficiency of the terminal PECVD system; the third is, when the plasma generation device of a remote PECVD system has been set as a plasma generation method in direct current (DC) discharge, radio frequency (RF) discharge, microwave discharge, The plasma source generated in the chamber of the plasma generating device cannot maintain or meet the optimal requirements of the remote PECVD process, for example, the plasma density cannot be effectively controlled, so that it is easy to cause low plasma density or Disadvantages such as poor uniformity of slurry spatial distribution relatively reduce the process efficiency of the remote PECVD system

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