Method of forming dielectric capping layer for copper interconnect

A dielectric and covering layer technology, which is applied in the field of forming a dielectric covering layer, can solve problems such as the influence of electromagnetic characteristics of copper interconnection, and achieve the effects of improving electromigration characteristics, interface characteristics, reliability and yield

Active Publication Date: 2019-05-21
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Unsmooth interfaces will have a greater impact on the electromagnetic properties of copper interconnects

Method used

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  • Method of forming dielectric capping layer for copper interconnect
  • Method of forming dielectric capping layer for copper interconnect
  • Method of forming dielectric capping layer for copper interconnect

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[0030] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0031] In order to thoroughly understand the present invention, detailed steps and detailed structures will be provided in the following description, so as to explain the technical solution proposed by the present invention. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed descriptions.

[0032] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rathe...

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Abstract

The invention provides a forming method of a copper-interlinked dielectric covering layer. The forming method includes: providing a semiconductor substrate; forming a low K dielectric layer and a copper-interlinked structure positioned in the low K dielectric layer on the semiconductor substrate; etching the low K dielectric layer to enable height of the top face of the low K dielectric layer to be smaller than that of the top face of the copper-interlinked structure; depositing an amorphous Si layer on the surface of the low K dielectric layer and the copper-interlinked structre; introducing a first gas source to treat the amorphous Si layer to form a silicon-enriched SiN layer; performing annealing treatment to form a CusiN layer on the surface of the copper-interlinked structure; introducing a second gas source to treat the surfaces of the low K dielectric layer and the copper-interlinked structure to enable the amorphous Si layer to be completely converted into a SiN layer and to fully form the CuSiN layer on the surface of the copper-interlinked structure; depositing on the SiN layer to form the dielectric covering layer. By the forming method, reliability of devices can be ensured, electromigration characteristics of copper interlinking are improved, influence on electromagnetic characteristics of copper interlinking is avoided, and the problem that bad influence is generated on the electromagnetic characteristics due to the fact that an interface covered by a sharp corner is uneven is solved.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for forming a copper interconnect dielectric covering layer. Background technique [0002] With the development of integrated circuits, the feature size continues to decrease, and the current density of metal wires increases sharply; at the same time, the increase in chip integration leads to increased power consumption per unit area. Therefore, the reliability of metal wiring has always been an important issue in IC design. and important issues of concern to manufacturing. In metal wires, electrons moving in the opposite direction of the electric field exchange momentum with metal ions, resulting in diffusion-dominated mass transport of metal ions, a phenomenon known as electromigration. Electromigration is an important metal failure mechanism in interconnect structures of semiconductor devices. There are two types of failures caused by electromigration, which ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
CPCH01L21/76829
Inventor 邓浩
Owner SEMICON MFG INT (SHANGHAI) CORP
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