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Power module

A power module group, power module technology, applied in the output power conversion device, AC power input into DC power output, electrical components and other directions, can solve problems such as increasing power density, to increase power density, reduce costs, avoid uneven flow effect

Inactive Publication Date: 2017-01-11
ZHEJIANG HAIDE NEW ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to design a set of IGBT power modules connected to the radiator in mirror image, a bent DC busbar, a driver board and an AC copper bar to solve the problem of reducing stray inductance while increasing power density

Method used

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Embodiment 1

[0027] Embodiment 1: as Figures 1 to 3 As shown, the power module module involved in the present invention includes an IGBT power module and a capacitor module. The IGBT power module is composed of three IGBT power module structures arranged side by side. The capacitor module includes a capacitor group 9, a positive busbar copper bar 8, a middle Insulation layer 7 and negative busbar copper bar 6.

[0028] The IGBT power module structure includes an IGBT module group, an IGBT driver board 2, a heat sink 3 for the IGBT module, a DC busbar 4 connected to the IGBT module, and an AC copper busbar 5 for connecting the IGBT modules in parallel. The IGBT module group consists of two IGBT modules 1 connected in parallel and installed on the liquid cooling radiator 3. The IGBT module 1 can be a commonly used 1000A power module (such as the fourth-generation FF1000R17IE4 of Infineon in Germany, or it can be the same package size of the fifth generation FF1800R17IP5), it can also be ne...

Embodiment 2

[0030] Embodiment 2: as Figure 4 As shown, the power module module involved in the present invention includes an IGBT power module and a capacitor module. The IGBT power module is composed of three IGBT power module structures arranged side by side. The capacitor module includes a capacitor group 9, a positive busbar copper bar 8, a middle Insulation layer 7 and negative busbar copper bar 6.

[0031]The IGBT power module structure includes an IGBT module group, an IGBT driver board 2, a heat sink 3 for the IGBT module, a DC busbar 4 connected to the IGBT module, and an AC copper busbar 5 for connecting the IGBT modules in parallel. The IGBT module group consists of two IGBT modules 1 connected in parallel and installed on the liquid cooling radiator 3. The IGBT module 1 can be a commonly used 1000A power module (such as the fourth-generation FF1000R17IE4 of Infineon in Germany, or it can be the same package size of the fifth generation FF1800R17IP5), it can also be new silic...

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Abstract

The invention discloses a power module, which comprises an IGBT module group, IGBT driving boards, a radiator of the IGBT module group, DC busbars connected with IGBT modules, AC copper bars connected with the IGBT modules in parallel, a capacitor group, positive and negative bus copper bars and an intermediate insulating layer, and is characterized in that the IGBT modules, the IGBT driving boards, the DC busbars and the AC copper bars are symmetrically arranged at two sides of the radiator, and the DC busbars, the positive and negative bus copper bars and the intermediate insulating layer are connected into an integral whole together through an output terminal of the capacitor group. The power module disclosed by the invention can reduce stray inductance of the IGBT modules and can reduce turn-off overvoltage of the IGBT modules; the IGBT modules can be arranged at two sides of the radiator, thereby being more compact in structure, and improving the power density; and the AC copper bars are identical in path, so that IGBT current sharing is more excellent, and the reliability is higher.

Description

technical field [0001] The invention belongs to the field of electronic equipment, and in particular relates to a power module module. Background technique [0002] In recent years, power semiconductors have developed rapidly, the density of power semiconductors has continued to increase, and the update speed of new devices has accelerated. High-power power electronic inverters, especially wind power converters, photovoltaic inverters, general-purpose inverters, energy storage converters, etc. Very limited by the development of IGBT modules, with the development of new IGBT modules, the comprehensive loss of IGBT modules in the future will be lower, the efficiency will be higher, and the size will be smaller. High-power power electronic inverters will also have higher switching frequency and smaller size Develop in the direction of small size and lower cost. However, compared with IGBT modules, the development of passive devices (capacitors, resistors) and heat dissipation ...

Claims

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Application Information

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IPC IPC(8): H02M7/00
CPCH02M7/003
Inventor 吕怀明
Owner ZHEJIANG HAIDE NEW ENERGY
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