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Diode packaging process

A preparation process and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of zero utilization of empty pins, inconvenient production and application of integrated circuit boards, etc., and achieve the advantages of reducing quantity and improving quality , good quality effect

Inactive Publication Date: 2017-01-11
安徽先捷电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technology of the present invention is mainly aimed at the fact that diodes are easy to produce empty pins during the production and manufacture of patch packages, resulting in zero utilization of empty pins, which leads to inconvenience in the production and application of integrated circuit boards. By developing a preparation process for diodes, it is manufactured using a dual-core process. SMD packaging, making technological breakthroughs in the utilization of wafers, solving the defect of empty feet of SMD diodes, improving electrical performance parameters, and reducing production costs

Method used

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Examples

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Effect test

Embodiment 1

[0033] Embodiment 1. A kind of Schottky diode, product model is BAT54, adopts SOT-23 package, and wafer is a 4-inch chip, and the concrete implementation production process is as follows:

[0034] (1) Scribing: Take out the coated wafer from the nitrogen protection cabinet for standby, first perform wafer grinding, remove the wafer surface film, place the wafer on the workbench of the high-speed dicing machine, and calibrate the high-speed dicing According to the camera angle of the machine, the scribing lane size required for a 4-inch wafer is 50um and the chip size is 350um*350um, and the width of the cutting lane is set. The width of the axis dicing is 50um for the scribing lane of a single chip. After the width of the dicing lane is set, the wafer is cut. The workbench carrying the wafer moves in a 90° straight line along the tangential direction of the contact point between the blade and the wafer. Turn on the water washing function and use deionized water to rinse the si...

Embodiment 2

[0043] Embodiment 2. A kind of switching diode, product model is BAV99, adopts SOT-23 package, and wafer is a 4-inch chip, and the concrete implementation production process is as follows:

[0044] (1) Scribing: Take out the coated wafer from the nitrogen protection cabinet for standby, first perform wafer grinding, remove the wafer surface film, place the wafer on the workbench of the high-speed dicing machine, and calibrate the high-speed dicing According to the camera angle of the machine, the dicing lane size required for a 4-inch wafer is 40um and the chip size is 280um*280um, and the width of the cutting lane is set. The width of the axis dicing is 40um, and the scribing lane size of a single chip is 40um. After the width of the dicing lane is set, the wafer is cut. The workbench carrying the wafer moves in a 90° straight line along the tangential direction of the contact point between the blade and the wafer. Turn on the water washing function and use deionized water to...

Embodiment 3

[0053] Embodiment 3. A kind of zener diode, product model is AZ23C2V7, adopts SOT-23 package, and wafer is a 4-inch chip, and the concrete implementation production process is as follows:

[0054] (1) Scribing: Take out the coated wafer from the nitrogen protection cabinet for standby, first perform wafer grinding, remove the wafer surface film, place the wafer on the workbench of the high-speed dicing machine, and calibrate the high-speed dicing According to the camera angle of the machine, the scribing lane size required for a 4-inch wafer is 50um and the chip size is 350um*350um, and the width of the cutting lane is set. The width of the axis dicing is 50um for the scribing lane of a single chip. After the width of the dicing lane is set, the wafer is cut. The workbench carrying the wafer moves in a 90° straight line along the tangential direction of the contact point between the blade and the wafer. Turn on the water washing function and use deionized water to rinse the si...

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Abstract

The invention relates to producing and manufacturing of semiconductor electronic devices, in particular to a diode packaging process. The diode packaging process includes: scribing, pasting, welding, plastically sealing, electroplating, rib-cutting, testing, silk printing, and packaging to obtain a diode. A double-core manufacturing process is adopted, so that the defect that multiple-pin pasting packaging is prone to causing empty pins is overcome; the diode is small in size, excellent in electric performance, high in quality and simple and precise in process and has the characteristics of simplicity and practicability; the diode packaging process is universally suitable for high-density integrated circuit board assembling, number of integrated circuit boards is reduced, quality advantage is improved, space and area occupied by the integrated circuit boards are effectively reduced, improving is kept, and production cost is lowered.

Description

technical field [0001] The technology of the invention relates to the production and manufacture of semiconductor electronic components, in particular to a preparation process for diode packaging. Background technique [0002] Among semiconductor electronic components, diodes are one of the most commonly used electronic components. Its biggest characteristic is unidirectional conduction, that is, current can only flow through one direction of the diode. The function of the diode is a rectifier circuit, a detection circuit, and a stable Voltage circuits and various modulation circuits are mainly composed of diodes, and their principles are very simple. It is precisely because of the invention of diodes and other components that we have the birth of our colorful electronic information world. [0003] An early vacuum electron diode, an electronic device capable of conducting current in one direction. There is a PN junction and two lead terminals inside the semiconductor diode....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/329
CPCH01L29/6609
Inventor 郑烽
Owner 安徽先捷电子股份有限公司
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