A kind of epitaxial growth method and the epitaxial layer of buried heterostructure

Abstract

The invention relates to an epitaxial growth method and an epitaxial layer for burying a heterostructure, comprising the following steps: S1, growing part or all of an n / p / n / p InP or InGaAsP layer; S2, by burying, dry method or wet method Etch the shape model of the epitaxial growth required; S3, grow all Al-containing materials in the epitaxial structure in the shape model. In the present invention, part or all of the n / p / n / p structure is formed first, and then the shape of the epitaxial layer to be grown is etched, and then the epitaxial layer is grown therein. The method of the invention can effectively combine the advantages of AlGaInAs / InP material and BH technology to grow a high-efficiency laser epitaxial structure, so as to avoid Al oxidation, reduce Auger recombination, inter-band absorption, and improve the high temperature characteristics of the device. The threshold current density of the laser is reduced, the characteristic temperature of the active layer material and the external quantum efficiency, internal quantum efficiency and conversion efficiency of the quantum well in the active region are improved.

Description

technical field [0001] The invention relates to the field of semiconductor lasers, in particular to an epitaxial growth method and an epitaxial layer for burying heterostructures. Background technique [0002] The semiconductor laser has developed from the initial operation at low temperature of 25°C to continuous operation at room temperature, and now it has developed to continuous operation at high temperature of 85°C. The active region of the semiconductor laser has developed from a homojunction to a single heterojunction, a double heterojunction, and a quantum well. (Single, multiple quantum wells) and other forms, in the final analysis, improve the external quantum efficiency, internal quantum efficiency and conversion efficiency of the semiconductor active layer material. [0003] In the prior art, the conduction band offset ΔEc=0.72ΔEg in the quantum well structure of AlGaInAs / InP material has a larger electron confinement potential than InGaAsP / InP (ΔEc=0.4ΔEg), whic...

AI Technical Summary

Problems solved by technology

Because BH (buried heterostructure) technology can more effectively confine the carriers in the epitaxial layer, it can make the threshold current of the laser lower and the optical power higher. However, AlGaInAs is easily oxidized, which limits its application in BH. At present, All related major companies are researching the BH technology of AlGaInAs

Images