A kind of epitaxial growth method and the epitaxial layer of buried heterostructure
An epitaxial growth and buried layer technology, applied in laser parts, semiconductor lasers, electrical components, etc., can solve problems such as threshold current and low optical power, reduce threshold current density, reduce Auger recombination, and improve high temperature characteristics. Effect
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[0024] An epitaxial growth method and an epitaxial layer for burying a heterostructure according to the present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0025] The following is a best example of an epitaxial growth method and an epitaxial layer buried in a heterostructure described in the present invention, which does not limit the protection scope of the present invention.
[0026] figure 1 An epitaxial growth method is shown, comprising the following steps:
[0027] S1, growing part or all of the n / p / n / p InP or InGaAsP layer;
[0028] S2, the shape model of epitaxial growth required by burial, dry or wet etching;
[0029] S3. Growing all Al-containing materials in the epitaxial structure in the shape model.
[0030] Preferably, the step S1 specifically includes growing a Buffer layer, a first p-InP layer, and an n-InP layer sequentially on an InP substrate; the Buffer layer is an n-type InP buffer layer.
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