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A method for preparing doped perovskite thin film batteries by dissolving lead iodide at room temperature

A thin film battery, perovskite technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of restricted application, low repeatability, poor stability, etc., to improve stability, improve solubility, and improve battery conversion efficiency. Effect

Active Publication Date: 2018-11-06
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, its sensitivity to water vapor, poor stability and low repeatability still restrict its practical application

Method used

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  • A method for preparing doped perovskite thin film batteries by dissolving lead iodide at room temperature
  • A method for preparing doped perovskite thin film batteries by dissolving lead iodide at room temperature
  • A method for preparing doped perovskite thin film batteries by dissolving lead iodide at room temperature

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Embodiment 1

[0031] In this embodiment, the method for dissolving lead iodide at room temperature to prepare a doped perovskite thin film battery is as follows:

[0032] 1. Ultrasonic cleaning the substrate with detergent, acetone, absolute ethanol, and deionized water in sequence, and then drying the substrate with nitrogen; the substrate is FTO transparent conductive glass, and its square resistance is ~15Ω / sq;

[0033] 2. Spin-coat isopropoxy titanic acidic solution on the substrate treated in step 1, sinter in air at 450°C for 30min, and then soak in 40mM TiCl 4 solution, treated at 70°C for 30 minutes, and finally sintered at 450°C for 30 minutes to obtain a dense electron transport layer TiO 2 film.

[0034] The preparation process of the isopropoxytitanium acidic solution is as follows: 730 μL of isopropoxytitanium (Ti{OCH(CH 3 ) 2} 4) was added to 5 mL of ethanol to obtain solution A, 69 μL of 2M HCl was added to 5 mL of ethanol to obtain solution B, and solution A and solution...

Embodiment 2

[0039] 1. Ultrasonic cleaning the substrate with detergent, acetone, absolute ethanol, and deionized water in sequence, and then drying the substrate with nitrogen; the substrate is FTO transparent conductive glass, and its square resistance is ~15Ω / sq;

[0040] 2. Spin-coat isopropoxy titanic acidic solution on the substrate treated in step 1, sinter in air at 450°C for 30min, and then soak in 40mM TiCl 4 solution, treated at 70°C for 30 minutes, and finally sintered at 450°C for 30 minutes to obtain a dense electron transport layer TiO 2 film.

[0041] The preparation process of the isopropoxytitanium acidic solution is as follows: 730 μL of isopropoxytitanium (Ti{OCH(CH 3 ) 2} 4 ) was added to 5 mL of ethanol to obtain solution A, 69 μL of 2M HCl was added to 5 mL of ethanol to obtain solution B, and solution A and solution B were mixed uniformly to obtain an acidic solution of isopropoxytitanium.

[0042] 3. Spin-coat NH on the electron transport layer 4 Cl and PbI 2...

Embodiment 3

[0047] 1. Ultrasonic cleaning the substrate with detergent, acetone, absolute ethanol, and deionized water in sequence, and then drying the substrate with nitrogen; the substrate is FTO transparent conductive glass, and its square resistance is ~15Ω / sq;

[0048] 2. Spin-coat isopropoxy titanic acidic solution on the substrate treated in step 1, sinter in air at 450°C for 30min, and then soak in 40mM TiCl 4 solution, treated at 70°C for 30 minutes, and finally sintered at 450°C for 30 minutes to obtain a dense electron transport layer TiO 2 film.

[0049] The preparation process of the isopropoxytitanium acidic solution is as follows: 730 μL of isopropoxytitanium (Ti{OCH(CH 3 ) 2} 4 ) was added to 5 mL of ethanol to obtain solution A, 69 μL of 2M HCl was added to 5 mL of ethanol to obtain solution B, and solution A and solution B were mixed uniformly to obtain an acidic solution of isopropoxytitanium.

[0050] 3. Spin-coat NH on the electron transport layer 4 Cl and PbI 2...

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Abstract

The invention discloses a method for preparing a doped perovskite thin film battery by dissolving lead iodide at room temperature. The battery structure is as follows from bottom to top: 1 conductive substrate, 2 electron transport layer, 3 doped perovskite absorbing layer, 4 hole transport layer, 5 top electrode. The perovskite absorbing layer is doped by first dissolving ammonium chloride and lead iodide in a DMF solvent at a certain molar ratio, shaking at room temperature for 2 to 3 minutes, and then spin-coating on the substrate, and then depositing an organic halide by CVD reaction. Thin (MAI, FAI or MAI / FAI mixture) or solution spin-coated organic halides. The use of ammonium chloride to assist in dissolving lead iodide to prepare perovskite thin film batteries can effectively avoid lead iodide insoluble or easy to crystallize during the spin coating process, as well as the metastable state in the preparation process of polar solvents, which is beneficial The preparation of thin films, the nucleation and growth of perovskite, improve the conversion efficiency of batteries. Moreover, large-area perovskite thin-film batteries can be fabricated at room temperature.

Description

technical field [0001] The invention relates to a preparation method of a novel thin-film solar cell, in particular to a method for preparing a doped perovskite thin-film cell by dissolving lead iodide at room temperature. Background technique [0002] With the depletion of non-renewable energy such as oil and coal and the CO generated during use 2 , SiO 2 Such gases and dusts have caused the global greenhouse effect, acid rain and the increase of PM 2.5 index, seriously affecting our health and endangering the natural environment on which human beings depend. The development and utilization of renewable new energy will be the theme of human development in the future, and solar energy directly converts light into heat and electricity, which is non-polluting and inexhaustible to the environment. It is an important way to solve the global energy crisis and reduce pollution. Solar cells mainly convert light into electricity. At present, silicon-based solar cells and thin-film...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K30/151Y02E10/549
Inventor 蒋阳童国庆蓝新正宋自航李国鹏仲洪海
Owner HEFEI UNIV OF TECH
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