A Lateral Insulated Gate Bipolar Transistor with High Hot Carrier Reliability

Abstract

The invention provides a transverse insulated gate bipolar transistor with high thermal carrier reliability, which comprises a P-type substrate with a buried oxide layer. An N-type epitaxial layer is provided on the buried oxide layer. In the N-type epitaxial layer, an N-type buffer well and a P-type body region are provided. In the N-type buffer well, a P-type positive region is provided. In the P-type body region, an N-type negative region and a P-type body contact region are provided. The surface of the N-type epitaxial layer is provided with a gate oxide layer and a field oxide layer. A polysilicon gate is provided on the surface of the gate oxide layer, and polysilicon is arranged on the right upper surface of the field oxide layer. The P-type positive region consists of block shaped N-type regions arranged in rows; in the N-type buffer region, a floating hollow N-type contact region is provided. The P-type positive region is arranged in the floating hollow N-type contact region, and each of the block shaped N-type regions is surrounded by the floating hollow N-type contact region on three sides. And the other end of the field oxide layer extends toward the P-type positive region and ends at the floating hollow N-type contact region. According to the invention, it is possible to reduce the emission efficiency of a parasitic PNP transistor, reduce the hot carrier damage in the on-state and the switching state, and improve the reliability of devices.

Description

technical field [0001] The present invention mainly relates to the reliability field of high-frequency and high-voltage power semiconductor devices, specifically, a lateral insulated gate bipolar transistor with high hot-carrier reliability, which is suitable for aerospace electronic equipment, satellite communication equipment, plasma display Related power integrated circuits in the fields of equipment, electronic computers, communication systems, and automobile industries. Background technique [0002] The reliability of integrated circuits has been the focus of people's attention since the birth of integrated circuits, among which Hot Carrier Injection (Hot Carrier Injection, HCI) characteristics are a very important reliability issue, and are also the main cause of failure of many electronic products. one of the reasons. With the increasing demand for energy saving, the performance of high-voltage power integrated circuit products has received more and more attention. S...

AI Technical Summary

Problems solved by technology

Reducing the channel electric field in the on-state stage is generally achieved by reducing the doping concentration of the P-type body region, and shortening the turn-off delay is mainly achieved by increasing the doping concentration of the N-type buffer zone, but changing the P-type body region too much The doping concentration of the N-type buffer and the N-type buffer may cause a decrease in the withstand voltage of the device or an increase in the on-resistance

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