High electron mobility transistor device and manufacturing method thereof
A high electron mobility, manufacturing method technology, applied in semiconductor/solid state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of reducing the reliability of high electron mobility transistor 002, T-type gate 232 and source field plate 020 Short circuit, dielectric layer 010 is prone to failure, etc., to reduce the probability of failure, weaken the strong electric field, and improve reliability.
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no. 1 example
[0049] 2, the present embodiment provides a high electron mobility transistor device 100, which includes: a substrate 110, a semiconductor layer 120, a gate 132, a source 131, a drain 133, a first dielectric layer 141, a second A source field plate 151 , a second dielectric layer 142 , and a second source field plate 152 , wherein the source electrode 131 , the first source field plate 151 and the second source field plate 152 are at the same potential. The semiconductor layer 120 is located on the substrate 110 , specifically on the upper surface of the substrate 110 ; the gate 132 , the source 131 and the drain 133 are located on the semiconductor layer 120 , and the gate 132 is located between the source 131 and the drain 133 . In this embodiment, both the source 131 and the drain 133 are located on the upper surface of the semiconductor layer 120 and are in contact with the semiconductor layer 120 , and the bottom end of the gate 132 is embedded in the semiconductor layer 1...
no. 2 example
[0075] Please refer to image 3 , the present embodiment provides a high electron mobility transistor device 200, which has approximately the same structure as the high electron mobility transistor device 100 provided in the first embodiment, and the second source field plate 152 is in contact with the source electrode 131 (electrically connected) , the difference between the two is that in this embodiment, the second dielectric layer 142 on the first source field plate 151 is provided with a through hole 170, and the part of the second source field plate 252 on the first source field plate 151 passes through the through hole 170. The hole 170 is in contact with the first source field plate 151 , that is, the second source field plate 252 is electrically connected to the first source field plate 151 , so as to realize the equipotential of the source 131 , the first source field plate 151 and the second source field plate 152 .
[0076] The first source field plate 151 and the ...
no. 3 example
[0079] Please refer to Figure 4 , this embodiment provides a high electron mobility transistor device 300, which has substantially the same structure as the high electron mobility transistor device 100 provided in the first embodiment, and the first source field plate 151 and the source electrode 131 are electrically connected outside the active region. The difference between the two is that in this embodiment, the second source field plate 352 is only located on the gate 132 and the second dielectric layer 142 on the first source field plate 151, and the second source field plate 352 and the active The outer region is electrically connected to realize the equipotential of the source 131 , the first source field plate 151 and the second source field plate 352 .
[0080] The first source field plate 151 and the second source field plate 352 in this embodiment weaken the strong electric field between the gate 132 and the drain 133 close to the gate 132 and at the same time the ...
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