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Semiconductor device and manufacturing method thereof and electronic equipment comprising semiconductor device

A technology of semiconductors and single crystal semiconductors, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, instruments, etc., can solve problems such as difficulty in stacking multiple vertical devices, increase in channel resistance, difficulty in controlling gate length, etc., and achieve improvement Effects of device performance, reduction of parasitic capacitance, and low leakage current

Inactive Publication Date: 2017-01-04
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, for vertical devices, it is difficult to control the gate length, especially for single crystal channel materials
On the other hand, if a polycrystalline channel material is used, the channel resistance is greatly increased compared to single crystal material, making it difficult to stack multiple vertical devices, as this would result in an excessively high resistance

Method used

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  • Semiconductor device and manufacturing method thereof and electronic equipment comprising semiconductor device
  • Semiconductor device and manufacturing method thereof and electronic equipment comprising semiconductor device
  • Semiconductor device and manufacturing method thereof and electronic equipment comprising semiconductor device

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Embodiment Construction

[0013] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0014] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

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Abstract

The invention discloses a semiconductor device and a manufacturing method thereof and electronic equipment comprising the semiconductor device. The semiconductor device disclosed by the embodiment comprises a substrate, a first source / drain layer, a channel layer and a second source / drain layer, wherein the first source / drain layer, the channel layer and the second source / drain layer are sequentially superposed on the substrate and are adjacent to one another; and the channel layer comprises a semiconductor material which is different from the first source / drain layer and the second source / drain layer, and a gate stack formed around the periphery of the channel layer.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a vertical type semiconductor device, a method of manufacturing the same, and an electronic device including such a semiconductor device. Background technique [0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the horizontal type device cannot be easily further scaled down. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, vertical devices are easier to scale down than horizontal devices. [0003] However, for vertical devices, it is difficult to control the gate length, especially for single crystal channel materials. On the other hand, if a polycrystalline channel ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/088H01L21/8234H04N23/90
CPCH01L21/8234H01L21/823412H01L21/823437H01L21/823487H01L27/088H01L29/775B82Y10/00H01L29/41741H01L29/66439H01L29/66469H01L29/0676H01L29/267H01L29/66742H01L29/78642H01L29/0649H01L29/42392H01L29/66666H01L29/7827H01L29/0847H01L29/66522H01L29/42376H01L29/7848H01L29/20H01L21/823418H01L21/82345H01L21/823475H01L21/823842H01L21/823871H01L29/0638H01L29/1083H01L29/0653H01L29/66712H01L29/7813H04N13/332H04N13/111H04N13/366H04N13/398G05B23/0216G05B2219/32014G06F3/04817G06F3/0482G06T19/006H04N7/181G06V20/40G06V20/44G06V2201/06H04N23/698H04N23/90H01L21/2236H01L21/2253H01L21/823828H01L21/823878H01L23/5221H01L27/0925H01L29/66545H01L29/78618H01L29/78696H01L21/02532H01L21/3065H01L29/04H01L29/165H01L21/02636H01L21/2252H01L21/2258H01L21/31053H01L21/324H01L29/1037H01L29/1054H01L29/1095H01L29/152H01L29/205H01L29/45H01L29/66431H01L29/66462H01L29/6656H01L29/7788H01L21/3083H01L21/8221H01L21/823807H01L21/823814H01L21/823864H01L21/823885H01L27/092
Inventor 朱慧珑
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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