LED epitaxial wafer grown on magnesium aluminate scandium substrate and preparation method thereof

Abstract

The invention discloses an LED epitaxial wafer grown on a magnesium aluminate scandium substrate. The LED epitaxial wafer comprises a GaN buffer layer grown on the magnesium aluminate scandium substrate, an Al nano island layer grown on the GaN buffer layer, a non-doped GaN layer grown on the Al nano island layer, an n-type doped GaN film grown on the non-doped GaN layer, an InGaN / GaN quantum well grown on the n-type doped GaN film and a p-type doped GaN film grown on the InGaN / GaN quantum well. The invention also discloses a preparation method of the LED epitaxial wafer grown on the magnesium aluminate scandium substrate The LED epitaxial wafer grown on the magnesium aluminate scandium substrate has the advantages of being simple in growth technology and low in preparation cost, and the prepared LED epitaxial wafer has smooth surface, low defect density and great photoelectric performance.

Description

technical field [0001] The invention relates to an LED epitaxial wafer and a preparation method thereof, in particular to an epitaxial wafer grown on scandium magnesium aluminate (ScMgAlO 4 ) LED epitaxial wafer on substrate and preparation method thereof. Background technique [0002] GaN and its related group III nitrides have excellent electrical, optical, and acoustic properties, and have been widely used in the preparation of light-emitting diodes (LEDs), laser diodes (LDs), and field-effect transistors. [0003] Commercial LEDs are mainly epitaxially grown on sapphire substrates. On the one hand, due to the lattice mismatch between sapphire and GaN as high as 13.3%, a high dislocation density is formed during the epitaxial GaN film process, which reduces the carrier mobility of the material and shortens the carrier lifetime, which ultimately affects performance of GaN-based devices. On the other hand, since the thermal mismatch between sapphire heat and GaN is as hi...

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Problems solved by technology

However, growing GaN thin films on these substrates still faces many problems

For example, although the Si substrate is cheap and large in size, the lattice mismatch between the Si substrate and the epitaxial layer is relatively large; metal substrates with high thermal conductivity are mostly face-centered cubic or body-centered cubic structures, and the grown GaN films are prone to other impurity phases; La 0.3 Sr 1.7 AlTaO 6 and LiGaO 2 There is a low lattice mismatch between the substrate and the GaN thin film, but the preparation process of the large-sized substrate is difficult, and the quality of the single crystal of the substrate is poor, which is not conducive to the growth of high-quality GaN thin film and the industrialization of high-performance GaN thin film devices

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