Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

IGBT power module structure

A technology of power module and module group, which is applied in the direction of output power conversion device, conversion of equipment structural parts, conversion of AC power input to DC power output, etc., which can solve the problems of increasing power density and achieve increasing power density and reducing costs , Improve the effect of flow uniformity

Inactive Publication Date: 2016-12-21
ZHEJIANG HAIDE NEW ENERGY
View PDF2 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to design a set of IGBT power modules connected to the radiator in mirror image, a bent DC busbar, a driver board and an AC copper bar to solve the problem of reducing stray inductance while increasing power density

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • IGBT power module structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Embodiment 1: as figure 1 As shown, the structure of the IGBT power module involved in the present invention includes an IGBT module group, an IGBT driver board 2, a heat sink 3 for the IGBT module, a DC busbar 4 connecting the IGBT modules, and an AC copper busbar 5 for connecting the IGBT modules in parallel. The IGBT module group consists of two IGBT modules 1 connected in parallel and installed on the liquid cooling radiator 3. The IGBT module 1 can be a commonly used 1000A power module (such as the fourth-generation FF1000R17IE4 of Infineon in Germany, or it can be the same package size of the fifth generation FF1800R17IP5), it can also be new silicon carbide semiconductor (SiC) and gallium nitride semiconductor (GaN) devices; the driver board 2 is installed on two IGBT modules, and the two IGBT module driver boards are combined into one driver Board 2, its connection position is located in the middle of two IGBT modules 1; the coolant inlet of radiator 3 is locate...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an IGBT power module structure. The IGBT power module structure includes an IGBT module set, an IGBT driving board, a radiator of the IGBT module set, direct-current bus-bars connected with IGBT modules, and alternating-current copper bars connected in parallel with the IGBT modules, wherein the IGBT modules are arranged at two sides of the radiator. According to the IGBT power module structure, the stray inductance of the IGBT modules can be decreased, the turn-off overvoltage of the IGBT modules can be decreased; the IGBT modules can be arranged at the two sides of the radiator, so that the structure of the IGBT power module structure is more compact, and the power density of the IGBT power module structure can be improved; and the paths of the alternating-current copper bars are the same, so that the current equalization performance of IGBTs can be better, and reliability is higher.

Description

technical field [0001] The invention belongs to the field of electronic equipment, and in particular relates to an IGBT power module structure. Background technique [0002] In recent years, power semiconductors have developed rapidly, the density of power semiconductors has continued to increase, and the update speed of new devices has accelerated. High-power power electronic inverters, especially wind power converters, photovoltaic inverters, general-purpose inverters, energy storage converters, etc. Very limited by the development of IGBT modules, with the development of new IGBT modules, the comprehensive loss of IGBT modules in the future will be lower, the efficiency will be higher, and the size will be smaller. High-power power electronic inverters will also have higher switching frequency and smaller size Develop in the direction of small size and lower cost. However, compared with IGBT modules, the development of passive devices (capacitors, resistors) and heat dis...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H02M7/00
CPCH02M7/003
Inventor 吕怀明
Owner ZHEJIANG HAIDE NEW ENERGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products