Method for Batch Inspection of Semiconductor Devices Using Graphene Probes

Abstract

In order to realize high-precision semiconductor device detection without auxiliary structures such as dummy gate electrodes at a lower cost, and to consider the automatic processing of the pressure signal level of the touch probe during signal processing, the present invention provides A method that utilizes a batch detection semiconductor device with a graphene probe, including: (1) driving the semiconductor device to be detected in batches on the assembly line; The touch probe reaches the state to be tested; (3) detecting the pressure signal output by each touch probe of the semiconductor device to be tested; (4) detecting the electrical output signal of the semiconductor device to be tested according to the pressure signal.

Description

technical field [0001] The invention relates to the technical field of semiconductor device detection, and more particularly, relates to a method for batch detection of semiconductor devices using graphene probes. Background technique [0002] With the rapid development of semiconductor device manufacturing technology, in order to achieve faster computing speed, larger data storage capacity and more functions of semiconductor devices, semiconductor device wafers are developing towards higher component density and high integration. become thinner and shorter than ever. Therefore, the patterning accuracy for forming the gate is higher. In order to ensure the flatness of the surface, when forming the gate electrodes, it is preferable to form dummy gate electrodes so that the distribution of the gate electrodes is uniform. It is better to distribute dummy local interconnects when arranging via holes and local interconnect grooves, and such dummy structure regions are usually d...

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Problems solved by technology

However, this scheme is not applicable in some occasions that require high precision

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