SiO2 irregular nanocrystal network structure and preparation method thereof

A network structure, nanocrystal technology, applied in nanotechnology, silicon dioxide, coatings, etc., can solve problems such as performance and application are not well proven, and achieve high yield, simple operation and low cost.

Inactive Publication Date: 2016-12-21
BOHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And for SiO 2 The study of irregular nanocrystalline network structure materials has not been reported yet, and its performance and application have not been well confirmed. Therefore, the development of SiO 2 Irregular nanocrystal network structure to develop a new field of material properties has important academic significance and application

Method used

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  • SiO2 irregular nanocrystal network structure and preparation method thereof
  • SiO2 irregular nanocrystal network structure and preparation method thereof
  • SiO2 irregular nanocrystal network structure and preparation method thereof

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preparation example Construction

[0031] SiO according to the present invention 2 The preparation method of irregular nano crystal network structure, its steps are as follows:

[0032] The first step: pre-clean the substrate substrate and the loaded quartz tube. The substrate substrate needs to be ultrasonically cleaned with acetone, and then cleaned with deionized water. The quartz tube is wiped clean with alcohol cotton.

[0033] The second step: the SiO 2 After the mixed powder of S powder and S powder is evenly ground, put it into one end of the quartz tube as the reaction source, then place the pretreated substrate along the quartz tube at a distance of 20-30 cm from the reaction source, and finally put the reaction The source and substrate quartz tubes are put into a tube furnace with protective gas Ar.

[0034] Step 3: Heat up the tube furnace until the temperature of the reaction source reaches the reaction temperature, and the substrate temperature reaches the deposition temperature, keep warm for 1...

Embodiment 1

[0044] 0.75 g of sulfur powder with a purity of 99.99% and 0.75 g of silica powder with a purity of 99.99% were uniformly ground with a mortar and mixed thoroughly, and then put into the closed end of a single-opened quartz tube as a reaction source; n-type Si (111 ) The substrate is cleaned and placed in a position 20-25 cm away from the reaction source along the quartz tube, put the quartz tube with the reaction source and the substrate into the tube furnace, and introduce 20 sccm of protective gas Ar; open the tube The heating component of the type furnace, so that the temperature of the reaction source in the furnace reaches 1000 °C, the substrate temperature is about 890-940 °C, and maintains a constant temperature for 1.5 hrs; after the experiment, stop the gas supply, take out the quartz tube and drop it to room temperature under atmospheric conditions, that is, White flocculent SiO was grown on the substrate 2 Irregular nanocrystal network, see figure 1 . figure 1 Me...

Embodiment 2

[0046] 0.75 g of sulfur powder with a purity of 99.99% and 0.75 g of silica powder with a purity of 99.99% were uniformly ground with a mortar to make them fully mixed and then put into the closed end of a single-opened quartz tube as a reaction source; a quartz glass plate was used as a lining Clean the bottom and place it along the quartz tube at a distance of 21-26 cm from the reaction source, put the quartz tube with the reaction source and substrate into the tube furnace, and pass in 20 sccm of protective gas Ar; turn on the tube furnace The temperature-raising component is used to make the temperature of the reaction source in the furnace reach 1000 °C, the temperature of the substrate is about 890-940 °C, and maintain a constant temperature for 2 hrs; after the experiment, stop the gas supply, take out the quartz tube and drop it to room temperature under atmospheric conditions, that is, in the substrate White flocculent SiO grows on the bottom 2 Irregular nanonets. Th...

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Abstract

The invention belongs to the field of nanometer materials, and discloses a SiO2 irregular nanocrystal network structure and a preparation method thereof. The method comprises the following steps: with SiO2 powder and S powder as reaction sources, carrying out a reaction in a high-temperature area of a high-temperature tube furnace of a low vacuum system, and carrying out depositing with carrier gas onto the low-temperature area of a silicon-chip substrate. The method provided by the invention has the advantages of simple operation, high yield, low cost, safety, environmental protection and no need of any catalyst, and can be completed through a chemical reaction under the condition of high temperature. The SiO2 irregular crystal nanometer network prepared by utilizing the method provided by the invention has a mesoporous structure and facilitates to transfer and transportation of substances; meanwhile, due to a special structure of the SiO2 irregular crystal nanometer network, important academic significance and application in a novel field of development of material properties are obtained.

Description

technical field [0001] The invention belongs to the technical field of preparation of three-dimensional nanomaterials, in particular to a SiO 2 Irregular nanocrystal network structure and preparation method thereof. Background technique [0002] With the development of micro-nano technology and the advancement of integrated optics technology, it is particularly important to synthesize nano-scale luminescent materials to meet the needs of nano-optoelectronic devices. SiO 2 It is a new type of nanomaterial, which has volume effect, quantum size effect, macroscopic quantum tunneling effect, special photoelectric characteristics and so on. These unique properties have broad application prospects in the fields of rubber, plastics, fibers, coatings, photochemistry, and biomedicine. and SiO 2 As a photoluminescent material, nanomaterials also have potential applications in nano-optoelectronic devices, high-resolution near-field optical scanning microscopes, and low-dimensional ...

Claims

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Application Information

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IPC IPC(8): C01B33/12B82Y40/00C03C17/23
CPCC01B33/12C01P2002/72C01P2002/85C01P2004/03C01P2004/64C01P2006/60C03C17/23C03C2217/213C03C2217/425C03C2218/17
Inventor 杨喜宝吕航张丽娜王莉丽陆晓东朱革徐菁刘秋颖王斌
Owner BOHAI UNIV
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