A Tunneling Field Effect Transistor with Increased On-state Current

Abstract

The invention relates to a tunneling field-effect transistor which improves the on-state current, and belongs to the field of logic devices and circuits in VLSI. The Tunneling Field Effect Transistor of the present invention passes InN or In at the top of the source region x Ga 1‑x N material forms a polarized tunneling layer, using InN or In x Ga 1‑x The polarization effect of N forms a polarized electric field, which enhances the carrier tunneling ability from the source region to the polarized tunneling region, and increases the tunneling current in the on state; since the conduction band of the epitaxial intrinsic region is not in the off state The carrier cannot drift and diffuse across the potential barrier to this region, which effectively reduces the off-state current of the device; the thickness of the epitaxial intrinsic region and the polarization tunneling region can be 5nm or more, which is conducive to the realization of the process. Under the premise of ensuring low off-state current, the tunneling field effect transistor of the present invention effectively improves the on-state current of the device and reduces the difficulty of the process.

Description

technical field [0001] The invention belongs to the field of logic devices and circuits in VLSI, and in particular relates to a small-sized tunneling field-effect transistor (TFET) capable of increasing on-state current. Background technique [0002] Under the guidance of Moore's Law, the integration of microprocessors has been continuously improved, which has promoted the development of logic switching devices. In logic switching devices, Tunneling Field Effect Transistor (TFET) has become an important part of the field of semiconductor devices because of its high on-state current, low off-state current, small sub-threshold swing and excellent switching ratio. research hotspots. [0003] Tunneling Field Effect Transistor (TFET) is different from previous field effect transistors. It is based on quantum mechanics and works through band-band tunneling; by applying gate voltage, the energy band of the intrinsic region is changed, so that the source region Carriers can tunnel...

AI Technical Summary

Problems solved by technology

However, the device has the following problems: first, the thickness of the intrinsic region and the drain region are extremely thin, both less than 3nm, and it is difficult to realize the process; second, the control ability of the gate voltage on the drain region is weak, resulting in the off state of the device Larger current

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