Implantation method and structure capable of enhancing writing speed of floating body dynamic random access memory unit
A memory cell, dynamic random technology, used in semiconductor/solid-state device manufacturing, transistors, electrical components, etc., can solve the problems of incompatibility of manufacturing processes, limited application, difficult manufacturing processes, etc., to increase substrate current and improve writing. The effect of reducing the entry speed and reducing the leakage speed
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0021] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:
[0022] Figure 4 It is a schematic diagram of the injection method for improving the writing speed of the floating body DRAM unit according to the present invention. Such as Figure 4 As shown, the invention discloses an injection method for improving the writing speed of the floating body DRAM unit. Adopt SOI silicon wafer, including a buried oxide layer (BOX) 22 on the underlying silicon 21, and a substrate 23 on the buried oxide layer 22; prepare a shallow trench isolation trench 24 and a gate (G) on the substrate 23 25 and its side wall 26.
[0023] Afterwards, an oblique angle heavily doped ion implantation process 27 is performed on the substrate 23, and a channel 28, a source (S) 29 and a drain (D) 30 are formed in the substrate 23; wherein, the ion implantation is directed toward the drain 30 One side is inclined, and the dopant ions i...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com