Implantation method and structure capable of enhancing writing speed of floating body dynamic random access memory unit

A memory cell, dynamic random technology, used in semiconductor/solid-state device manufacturing, transistors, electrical components, etc., can solve the problems of incompatibility of manufacturing processes, limited application, difficult manufacturing processes, etc., to increase substrate current and improve writing. The effect of reducing the entry speed and reducing the leakage speed

Active Publication Date: 2014-06-04
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
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Problems solved by technology

[0003] In addition to transistors, each storage unit of traditional embedded dynamic memory (EDRAM) also needs a deep trench capacitor structure. The deep trench of the capacitor makes the height of the storage unit much larger than its width, which makes the manufacturing process difficult, and its The production process is very incompatible with the CMOS VLSI process, which limits its application in embedded system-on-chip (SOC)

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  • Implantation method and structure capable of enhancing writing speed of floating body dynamic random access memory unit
  • Implantation method and structure capable of enhancing writing speed of floating body dynamic random access memory unit
  • Implantation method and structure capable of enhancing writing speed of floating body dynamic random access memory unit

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Embodiment Construction

[0021] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0022] Figure 4 It is a schematic diagram of the injection method for improving the writing speed of the floating body DRAM unit according to the present invention. Such as Figure 4 As shown, the invention discloses an injection method for improving the writing speed of the floating body DRAM unit. Adopt SOI silicon wafer, including a buried oxide layer (BOX) 22 on the underlying silicon 21, and a substrate 23 on the buried oxide layer 22; prepare a shallow trench isolation trench 24 and a gate (G) on the substrate 23 25 and its side wall 26.

[0023] Afterwards, an oblique angle heavily doped ion implantation process 27 is performed on the substrate 23, and a channel 28, a source (S) 29 and a drain (D) 30 are formed in the substrate 23; wherein, the ion implantation is directed toward the drain 30 One side is inclined, and the dopant ions i...

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Abstract

The invention relates to the field of semiconductor manufacturing, particularly an implantation method and structure capable of enhancing writing speed of a floating body dynamic random access memory unit. The invention discloses an implantation method and structure capable of enhancing writing speed of a floating body dynamic random access memory unit. A bevel heavily-doped ion implantation technique is carried out to enhance the longitudinal electric field in the drain end channel, increase the substrate current, increase the distance between the source end and the substrate and reduce the leakage speed of the accumulated current carrier from the source end, thereby enhancing the writing speed of the floating body cell.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an injection method and structure for improving the writing speed of a floating body DRAM unit. Background technique [0002] The development of embedded dynamic storage technology has made large-capacity dynamic random access memory (Dynamic Random Access Memory, DRAM for short) very common in current System on a Chip (SOC for short). Large-capacity embedded dynamic memory (Embedded Dynamic RAM, referred to as EDRAM) brings various benefits to SOC, such as improved bandwidth and reduced power consumption, which can only be realized by using embedded technology. [0003] In addition to transistors, each storage unit of traditional embedded dynamic memory (EDRAM) also needs a deep trench capacitor structure. The deep trench of the capacitor makes the height of the storage unit much larger than its width, which makes the manufacturing process difficult, and its The fabri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8242H01L27/108
Inventor 俞柳江
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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