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LED epitaxy structure capable of improving GaN crystal quality

A technology of epitaxial structure and crystal quality, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems that cannot effectively overcome the lattice mismatch, reduce the carrier confinement ability of quantum wells, and reduce the recombination probability

Inactive Publication Date: 2016-11-23
NANTONG TONGFANG SEMICON +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above-mentioned traditional LED epitaxial wafer structure cannot effectively overcome the lattice mismatch between the patterned substrate 1 and the GaN material, resulting in spontaneous polarization and piezoelectric polarization
The energy band is severely bent, which reduces the ability of the quantum well to confine carriers, resulting in a large leakage current
Moreover, the bending of the energy band causes the holes with a very low concentration to not be evenly distributed in the active region composed of the InGaN well layer 5 and the GaN barrier layer 6, thereby reducing the recombination probability and affecting the quality of the GaN crystal.

Method used

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  • LED epitaxy structure capable of improving GaN crystal quality
  • LED epitaxy structure capable of improving GaN crystal quality
  • LED epitaxy structure capable of improving GaN crystal quality

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] The growth method of the LED epitaxial structure of the present invention is:

[0021] 1) The device is baked at a high temperature in an MOCVD reactor to remove residual impurities on the surface of the patterned substrate 1 .

[0022] 2) Slowly lower the temperature between 400-800°C, and grow a layer of GaN buffer layer 2 on the patterned substrate 1.

[0023] 3) Raise the temperature rapidly, at 1000-1200°C, grow a U1-type GaN layer 3 on the GaN buffer layer 2, grow for 5-50min, and have a thickness of 0.5-5um.

[0024] 4) Re-grow a U2-type GaN layer 40 on the U1-type GaN layer 3:

[0025] a) First grow a 2D-type GaN layer 401 at a growth temperature of 1050° C., a thickness of 0.05 μm, and a growth pressure of 100 torr;

[0026] b) Then grow the 3D GaN layer 402 by rapid cooling and pressurization, the growth temperature is 990°C, the growth thickness is 0.05um, and the growth pressure is 400torr;

[0027] c) The growth cycle of the U2-type GaN layer 40 for impr...

Embodiment 2

[0034] The growth method of the LED epitaxial structure of the present invention is:

[0035] 1) The device is baked at a high temperature in an MOCVD reactor to remove residual impurities on the surface of the patterned substrate 1 .

[0036] 2) Slowly lower the temperature between 400-800°C, and grow a layer of GaN buffer layer 2 on the patterned substrate 1.

[0037] 3) Raise the temperature rapidly, at 1000-1200°C, grow a U1-type GaN layer 3 on the GaN buffer layer 2, grow for 5-50min, and have a thickness of 0.5-5um.

[0038] 4) Re-grow a U2-type GaN layer 40 on the U1-type GaN layer 3:

[0039]a) First grow a 2D GaN layer 401 at a growth temperature of 1080°C, a thickness of 0.1um, and a growth pressure of 200torr;

[0040] b) Then grow the 3D GaN layer 402 by rapid cooling and pressurization, the growth temperature is 1020°C, the growth thickness is 0.1um, and the growth pressure is 500torr;

[0041] c) The growth cycle of the U2-type GaN layer 40 for improving GaN c...

Embodiment 3

[0048] The growth method of the LED epitaxial structure of the present invention is:

[0049] 1) The device is baked at a high temperature in an MOCVD reactor to remove residual impurities on the surface of the patterned substrate 1 .

[0050] 2) Slowly lower the temperature between 400-800°C to grow a layer of GaN buffer layer 2.

[0051] 3) Raise the temperature rapidly, between 1000-1200°C, grow a U1-type GaN layer 3 on the GaN buffer layer 2, grow for 5-50min, and have a thickness of 0.5-5um.

[0052] 4) Growing U2-type GaN layer 40:

[0053] a) First grow a 2D GaN layer 401 at a growth temperature of 1110°C, a thickness of 0.5um, and a growth pressure of 300torr;

[0054] b) Then grow the 3D GaN layer 402 by rapid cooling and pressurization, the growth temperature is 1050°C, the growth thickness is 0.5um, and the growth pressure is 650torr;

[0055] c) The growth period of the U2-type GaN layer for improving GaN crystal quality is 3 periods.

[0056] 5) N-type GaN lay...

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Abstract

The invention provides an LED epitaxy structure capable of improving GaN crystal quality, and relates to the technical field of LED epitaxy. The LED epitaxy structure sequentially comprises a patterned substrate, a GaN buffer layer, a U type GaN layer, an N type GaN layer, an InGaN well layer, a GaN barrier layer, an electron blocking layer and a P type GaN layer from bottom to top. The LED epitaxy structure is structurally characterized in that the U type GaN layer sequentially comprises a U1 type GaN layer and a U2 type GaN layer from bottom to top; and the U2 type GaN layer comprises 2D type GaN layers and 3D type GaN layers which grow alternately. Compared with the prior art, the LED epitaxy structure can effectively reduce spontaneous polarization and piezoelectric polarity, improves the probability of radiative recombination and therefore can achieve the purpose of enhancing luminous efficiency of an LED.

Description

technical field [0001] The invention relates to the technical field of light-emitting diode epitaxy, in particular to an LED epitaxy structure capable of improving the quality of GaN crystals. Background technique [0002] GaN-based materials are direct bandgap semiconductors, and their bandgap is continuously adjustable from 1.8-6.2V. It is widely used in backlight, display screen, sensor, communication and lighting and other fields due to its long life, environmental protection and durability. Therefore, many LED experts and scholars are committed to the research and development of LED brightness, and the influence of epitaxial growth method on brightness is particularly important. [0003] The radiation recombination efficiency is the key point of the epitaxial growth process affecting the brightness. There are many factors affecting it, such as quantum confinement effect, polarization effect, deep energy level caused by defects and impurities, which will reduce the radi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/04H01L33/06H01L33/12
CPCH01L33/04H01L33/06H01L33/12
Inventor 韦春余林政志曾颀尧梁庆荣
Owner NANTONG TONGFANG SEMICON
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