Inter-chip interconnection structure, manufacturing method of inter-chip interconnection structure and packaging structure

Abstract

The invention discloses an inter-chip interconnection structure, a manufacturing method of the inter-chip interconnection structure and a packaging structure. The inter-chip interconnection structure comprises a substrate, and first bonding bumps formed on the substrate, and is characterized by also comprising a first three-dimensional nanostructure which is deposited on the first bonding bumps and has the conductivity. Therefore, continuous reduction of an interlayer pitch can be achieved, the bonding temperature is reduced and the integration level is improved.

Description

technical field [0001] The present invention relates to the field of semiconductors, in particular to an inter-chip interconnection structure, a method for manufacturing the inter-chip interconnection structure and a packaging structure. Background technique [0002] As the function and speed of electronic devices continue to increase, the density of I / O ports of integrated circuits is getting higher and higher, so the pitch (ie, center distance) between pads of electronic components is also shrinking. According to the 2011 report of the International Semiconductor Technology Roadmap (ITRS), it is pointed out that the typical inter-chip interconnect pitch will be reduced to 25 μm in 2015. [0003] Traditional interchip interconnection technologies include solder connection, solid-liquid interdiffusion connection technology, copper-copper (Cu-Cu) thermocompression bonding technology, etc. The first two technologies have a liquid phase in the bonding process, which limits the...

AI Technical Summary

Problems solved by technology

The first two technologies have a liquid phase in the bonding process, which limits the continued reduction in interconnect pitch

The thermocompression bonding technology requires a higher bonding temperature (300°C and above) and a higher bonding pressure, which may damage electronic devices (such as transistors), especially ultra-thin chips used in three-dimensional integration, Sensitive devices in MEMS (Micro Electro Mechanical Systems)

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