Junction Termination Structures for Lateral High Voltage Power Devices

Abstract

The invention provides a junction termination structure of a lateral high-voltage power device, including a straight junction termination structure and a curvature junction termination structure; the curvature junction termination structure includes a drain N + Contact region, N-type drift region, P-type substrate, gate polysilicon, gate oxide layer, P-well region, source P + Contact area and annular isolation dielectric; annular drain N + The contact area surrounds the annular N-type drift area, the annular N-type drift area surrounds the annular isolation medium, the annular isolation medium isolates the P-well area, the annular isolation medium is between the P-well area and the N-type drift area, and the P-well area and the N-type drift area. The type drift regions are not connected and the distance between them is L P , the present invention improves the problem of charge imbalance and electric field curvature effect in the part where the linear junction terminal structure and the curvature junction terminal structure are connected, avoids premature breakdown of the device, and thus obtains an optimized breakdown voltage.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a junction terminal structure of a lateral high-voltage power device. Background technique [0002] The development of high-voltage power integrated circuits is inseparable from the integration of lateral high-voltage power semiconductor devices. Lateral high-voltage power semiconductor devices are usually closed structures, including circular, racetrack and interdigitated structures. For the closed racetrack structure and the interdigitated structure, there will be small curvature terminations in the curved part and the fingertip part, and the electric field lines are easy to concentrate at the small curvature radius, which will lead to early avalanche breakdown of the device at the small curvature radius , which poses new challenges to the layout structure of lateral high-voltage power devices. [0003] The Chinese patent with publication number CN102244092...

AI Technical Summary

Problems solved by technology

[0004] What the present invention aims to solve are the defects of the traditional device charge imbalance and the curvature effect of the electric field at the junction, as well as the increasingly complicated terminal design and low reliability of devices with a vertical superjunction structure. terminal structure

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