Junction termination structure of transverse high-voltage power device

Abstract

The invention provides a junction termination structure of a transverse high-voltage power device, wherein the junction termination structure comprises a linear junction termination structure and a curved junction termination structure. The curved junction termination structure comprises a drain N<+> contact region, an N-type drift region, a P-type substrate, a gate polycrystalline silicon, a gate oxide layer, a P-well region, a source P<+> contact region and insulating medium, wherein the insulating medium comprises sub-mediums which are separated from each other. Each sub-medium extends from outside of the P-well region to outside of the N-type drift region. The annular drain N<+> contact region surrounds the annular N-type drift region. The annular N-type drift region surrounds the annular insulating medium. The annular insulating medium is used for insulating the P-well region. The annular insulating medium is arranged between the P-well region and the N-type drift region. The P-well region is not connected with the N-type drift region, and furthermore the distance between the P-well region and the N-type drift region is LP. The junction termination structure settles problems of charge unbalance and electric field curvature effect at the connecting part between the linear junction termination structure and the curved junction termination structure, thereby obtaining an optimal breakdown voltage.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a junction terminal structure of a lateral high-voltage power device. Background technique [0002] The development of high-voltage power integrated circuits is inseparable from the integration of lateral high-voltage power semiconductor devices. Lateral high-voltage power semiconductor devices are usually closed structures, including circular, racetrack and interdigitated structures. For the closed racetrack structure and the interdigitated structure, there will be small curvature terminations in the curved part and the fingertip part, and the electric field lines are easy to concentrate at the small curvature radius, which will lead to early avalanche breakdown of the device at the small curvature radius , which poses new challenges to the layout structure of lateral high-voltage power devices. [0003] The Chinese patent with publication number CN102244092...

AI Technical Summary

Problems solved by technology

[0004] What the present invention aims to solve are the defects of the traditional device charge imbalance and the curvature effect of the electric field at the junction, as well as the increasingly complicated terminal design and low reliability of devices with a vertical superjunction structure. terminal structure

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