AlGaInP-based light emitting diode wafer with high brightness and reversed polarity, and manufacturing method thereof

Abstract

The invention provides an AlGaInP-based light emitting diode wafer with high brightness and reversed polarity, and a manufacturing method thereof, and relates to the technical field of manufacturing an AlGaInP (quaternary system) light emitting diode. The manufacturing method of the AlGaInP-based light emitting diode wafer includes the steps: taking one crystal grain as one unit, manufacturing distributed reflector layers on an ITO film layer, and respectively manufacturing a first metal bonding layer in a wrapping mode on each reflector layer; and taking one crystal grain as one unit, manufacturing distributed a second metal bonding layer on a permanent substrate. The manufacturing method of the AlGaInP-based light emitting diode wafer is simple and reasonable in the technology, and only changes the manufacturing process of the distributed reflector layer, the first metal bonding layer and the second metal bonding layer to enable the bonded semi-finished product to form intervals between the adjacent crystal grains so as to be conductive to the subsequent process of segmenting the whole wafer into independent crystal grains to effectively improve the luminescence efficiency and the product yield rate of the finished diode.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics, in particular to the technical field of manufacturing AlGaInP quaternary light-emitting diodes. Background technique [0002] Quaternary AlGaInP is a semiconductor material with direct wide bandgap, which has been widely used in the preparation of various optoelectronic devices. Since the light-emitting band of the material can cover the 390-780nm band of visible light, more and more attention has been paid to the visible light high-brightness light-emitting diodes made of this material. Light-emitting diodes, especially AlGaInP (quaternary system) red high-brightness light-emitting diodes, have been widely used in many aspects such as outdoor display, monitoring lighting, and car lights. [0003] Compared with AlGaInP LED chips with ordinary structures, high-brightness AlGaInP chips realize substrate replacement through bonding technology, and use silicon substrates with good thermal co...

AI Technical Summary

Problems solved by technology

[0004] In the traditional wafer production process, in order to make the ITO thin film layer and the p-GaP window layer form a good electrical contact, it is necessary to make a dielectric film conductive hole layer that is uniformly distributed between the ITO thin film layer and the p-GaP window layer. Some conductive holes will inevitably appear on the cutting track. After the back-end cutting, the black color of the holes will make it difficult for the visual inspection machine to identify the core particles. Yield

When the client is performing die bonding operations, it will also cause difficult identification problems, which will bring customer complaints and even affect product reputation

[0005] In addition, in the traditional process, the metal bonding layer on the dicing road needs to be laser cut at the back end, and the cutting debris will inevitably be sputtered to the active area, causing reliability problems such as device leakage. Absorbing light on the top, resulting in a decrease in the brightness of the device after laser half-cutting

When it comes to the client for encapsulation and filling, it may cause problems such as glue creeping, which will affect the yield and reduce product competitiveness.

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