Monolithically integrated bulk acoustic wave duplexer and manufacturing method thereof

Abstract

The invention discloses a monolithic integrated bulk acoustic wave duplexer and a production method thereof. The monolithic integrated bulk acoustic wave duplexer is constituted by an emission band pass filter, a receiving band pass filter, and a phase shifter. The emission band pass filter is formed by at least two connected FBAR, and the receiving band pass filter is formed by at least two connected FBAR. The phase shifter is constituted by an inductor and two capacitors, and every FBAR is constituted by a bottom electrode, a piezoelectric layer, and a top electrode. Every capacitor is constituted by a bottom electrode, a dielectric layer, and a top electrode. The receiving band pass filter, the emission band pass filter, and the phase shifter are disposed on the same substrate. The emission band pass filter, the receiving band pass filter, and the phase shifter are disposed on one chip in an integrated manner, and then the duplexer capable of satisfying the miniaturization requirement of the mobile communication device is provided.

Description

technical field [0001] The present invention relates to a bulk acoustic wave (Bulk Acoustic Wave, BAW) duplexer composed of a film bulk acoustic resonator (Film Bulk Acoustic Resonator, FBAR) and a manufacturing method thereof, and more particularly relates to micro-electromechanical system (MEMS) technology, Monolithically integrated bulk acoustic wave duplexer and method of manufacturing the same. [0002] technical background [0003] In many different communication applications, such as a cell phone or any other transceiver, a common signal path is coupled to both the input of the receiver and the output of the transmitter. In such a transceiver, an antenna may be coupled to the input of the receiver and to the output of the transmitter. Thus, a duplexer typically couples a common signal path to the input of the receiver and the output of the transmitter. [0004] The duplexer provides the necessary coupling, but prevents the modulated transmit signal generated by the t...

AI Technical Summary

Problems solved by technology

However, according to the BAW duplexer in this document, since the inductors and capacitors in the BAW transmit band-pass filter, BAW receive band-pass filter, and phase shifter are manufactured by the formation of a single device, and these structures are packaged in Substrates to manufacture duplexer modules, so there is a big hurdle in reducing the size of duplexer modules

In addition, since the components in the duplexer (transmit bandpass filter, receive bandpass filter, inductor, and capacitor) also need to be manufactured separately and mounted on the same substrate, it requires more time and more high cost to manufacture duplexers

Although the inventor Yun-Kwon Park et al. have proposed a monolithically integrated bulk acoustic wave duplexer manufacturing method in the U.S. Patent Document No. US8720023 B2, the phase shifter in the duplexer is manufactured in On the packaging cap of the duplexer chip, the interconnection between the receiving bandpass filter and the transmitting bandpass filter is realized through the metal vias on the packaging cap, which increases the difficulty of manufacturing the duplexer

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