Trench type power metal oxide half field effect transistor and its manufacturing method

Abstract

The invention discloses a groove-type power metal-oxide-semiconductor field-effect transistor and a production method thereof. The grid electrode of the groove-type power metal-oxide-semiconductor field-effect transistor comprises an upper doped area, an intermediate area, and a lower doped area. The intermediate area is the essential area or the light doped area, and the grid electrode is provided with the -PIN interface, the P+ / N- or N+ / P- interface. The groove-type power metal-oxide-semiconductor field-effect transistor and the production method thereof are advantageous in that during the operation of the groove-type power metal-oxide-semiconductor field-effect transistor, the interface capacitor of the PIN interface or the PN interface can be used to reduce the capacitor serial connection between the grid electrode / the drain electrode, and therefore the equivalent capacitance between the grid electrode / the drain electrode can be reduced.

Description

technical field [0001] The invention relates to a power metal-oxygen-semiconductor field-effect transistor and a manufacturing method thereof, in particular to a trench-type power metal-oxygen-semiconductor field-effect transistor and a manufacturing method thereof. Background technique [0002] Power Metal Oxide Semiconductor Field Transistor (Power MOSFET) is widely used in switching elements of power devices, such as power supplies, rectifiers, or low-voltage motor controllers. Today's power MOSFETs mostly adopt a vertical structure design to increase device density. The power metal oxide half field effect transistor with a trench gate structure not only has a higher device density, but also has a lower on-resistance. operate. [0003] The operating loss of power MOSFETs can be divided into two categories: switching loss and conducting loss. The gate / drain capacitance (Cgd) is an important parameter affecting switching loss. . If the gate / drain capacitance value is to...

AI Technical Summary

Problems solved by technology

If the gate / drain capacitance is too high, the switching loss will increase, which will limit the switching speed of the power MOSFET, which is not conducive to the application in high-frequency circuits.

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