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Structure of pad in IC and its formation process

A technology of integrated circuits and bonding wires, which is applied to the bonding pad structure of high-frequency, low-noise integrated circuits and its formation field, and can solve problems such as inability to isolate noise.

Inactive Publication Date: 2007-12-26
REALTEK SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, this conventional technology can no longer produce the original effect in the current manufacturing process. In addition, this technology is the same as the previously mentioned technology, and cannot isolate the noise from the semiconductor substrate 50.

Method used

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  • Structure of pad in IC and its formation process
  • Structure of pad in IC and its formation process
  • Structure of pad in IC and its formation process

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Embodiment Construction

[0027] The invention discloses a structure of an integrated circuit bonding pad and a method for forming the same. Its specific embodiments are described with reference to the drawings, and similar reference numerals in the drawings represent similar components.

[0028] Please refer to FIG. 4 and FIG. 5 , which are structural schematic diagrams of a preferred embodiment of the integrated circuit bonding pad of the present invention. The structure of the integrated circuit bonding pad of the present invention is formed in an insulating layer 500 on a substrate 400. The structure of the integrated circuit bonding pad includes: a lower conductive layer 300, a composite layer structure 100 and a soldering layer. pad conductive layer 600 . The lower conductive layer 300 is arranged at a proper position in the insulating layer 500, and its two sides are respectively provided with a plurality of conductive layers 202 and a plurality of conductive connection layers 201 stacked on eac...

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Abstract

The present invention is structure of wire solder pad in IC and its formation process. The pad structure set inside an insulating layer includes one lower conducting layer, one composite layer structure and one conducting pad layer. The lower conducting layer is set in proper position inside the insulating layer and connected to some fixed potential; the composite layer structure is set on the insulating layer and consists of at least one conducting layer and one conducting connection layer laminated interactively; and the conducting pad layer is set on the composite layer structure.

Description

technical field [0001] The present invention relates to a structure and a forming method of a wire bonding gasket, in particular to a bonding wire gasket structure and a forming method suitable for a high-frequency, low-noise integrated circuit (IC), which can not only effectively isolate the The noise of the semiconductor substrate and the reduction of the equivalent capacitance value of the bonding wire pad can improve the bonding adhesion. Background technique [0002] In recent years, due to the increasing demand for low-power, low-cost wireless transceivers, mainstream integrated circuit (IC) technologies are competing to study how to implement more radio frequency functions on a single chip. In addition to allowing the integrated circuit to be placed on the integrated circuit packaging substrate, the external circuit connected to the external pins of the packaging substrate must be electrically connected to the integrated circuit through the bonding pad. Therefore, bo...

Claims

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Application Information

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IPC IPC(8): H01L23/48H01L21/60
CPCH01L2224/05093H01L24/48H01L24/05H01L2224/48463H01L2224/04042H01L2924/14H01L2924/01005H01L2924/01006H01L2224/05095H01L2224/02166H01L2224/05558H01L2924/01087H01L2924/014H01L2224/48H01L2924/00014H01L2924/00012
Inventor 林盈熙
Owner REALTEK SEMICON CORP
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