Trench type power metal oxide half field effect transistor and its manufacturing method

Abstract

The invention provides a trench type power metal-oxide-semiconductor field effect transistor and a manufacturing method thereof. A grid electrode of the trench type power metal-oxide-semiconductor field effect transistor includes an upper doping area and a lower doping area, and a PN junction is formed. Thus, when the trench type power metal-oxide-semiconductor field effect transistor works, junction capacitance formed by the PN junction can be connected in series with capacitance between the grid electrode and a drain electrode, thereby enabling the equivalent capacitance of the grid electrode and the drain electrode to be decreased.

Description

technical field [0001] The invention relates to a power metal oxide half field effect transistor and a manufacturing method thereof, in particular to a trench type power metal oxide half field effect transistor and a manufacturing method thereof. Background technique [0002] Power Metal Oxide Semiconductor Field Transistor (Power MOSFET) is widely used in switching elements of power devices, such as power supplies, rectifiers, or low-voltage motor controllers. Today's power MOSFETs mostly adopt a vertical structure design to increase device density. The power metal oxide half field effect transistor with a trench gate structure not only has a higher device density, but also has a lower on-resistance. operate. [0003] The operating loss of power MOSFETs can be divided into two categories: switching loss and conducting loss. The gate / drain capacitance (Cgd) is an important parameter affecting switching loss. . If the gate / drain capacitance value is too high, the switchin...

AI Technical Summary

Problems solved by technology

If the gate / drain capacitance is too high, the switching loss will increase, which will limit the switching speed of the power MOSFET, which is not conducive to the application in high-frequency circuits.

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