Method and system for realizing p-type nitride enhanced hemt through in-situ etch monitoring

Abstract

The invention discloses a method and a system for realizing a P-type nitride enhanced HEMT (High Electron Mobility Transistor) through in-situ etching monitoring. In one typical embodiment, through directly exposing an etching surface of an etching sample in a plasma and placing a test wafer plated with electrodes in an etching position equivalent to a sample in etching equipment, the etching rate on the sample is equal to that on the test wafer, so that an etching condition of a P-type semiconductor on the sample can be monitored through the change of the current between two electrodes on the test wafer, and then the obtained current signal is input into a computer and the computer controls the etching condition to realize a controllable and precise etching technology with feedback. According to the method and the system, the defects caused by realizing different etching depths through the single etching condition, the single etching rate and the etching time simply in the existing etching technology are effectively solved, and preparation of the P-type cap layer enhanced HEMT device can be realized at high precision and high repeatability.

Description

technical field [0001] The invention relates to a method and a system for developing precise and complex etching processes, in particular to a method and system for realizing a P-type nitride enhanced HEMT by monitoring in-situ etching. Background technique [0002] When the existing III-nitride semiconductor HEMT devices are used as high-frequency devices or high-voltage and high-power switching devices, especially as power switching devices, the enhancement mode HEMT device is helpful to improve the safety of the system compared with the depletion mode HEMT device. performance, reduce the loss of the device and simplify the design circuit. At present, the main methods for realizing enhanced HEMT include thin barrier layers, recessed gate structures, P-type capping layers, and F processing techniques. But each technology has its own shortcomings. For example, the world's first enhancement-mode HEMT device is implemented with a thinner barrier layer. This method does not u...

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Problems solved by technology

[0004] The main purpose of the present invention is to provide a method, system and application thereof for monitoring in-situ etching of P-type semiconductor HEMT devices, especially a method and system for developing precise and complex etching processes, so as to overcome the shortcomings of the prior art insufficient

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