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Method for growing single-layer and multi-layer transition metal sulfides through alternating injection of reactants

A technology of transition metal and alternating injection, applied in the preparation of sulfide/polysulfide, chemical instruments and methods, molybdenum sulfide, etc., to achieve the effect of simple and convenient operation, precise and controllable growth conditions, and broad application prospects

Inactive Publication Date: 2016-07-27
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The biggest problem currently limiting the practical application of ultrathin 2D layered materials is the acquisition of high-quality wafer-scale materials

Method used

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  • Method for growing single-layer and multi-layer transition metal sulfides through alternating injection of reactants

Examples

Experimental program
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Effect test

Embodiment 1

[0011] Place a clean silicon substrate of 100 square centimeters in the deposition reaction chamber, control the reaction pressure at 5 mbar, and the reaction temperature at 700°C; set the flow rate of the carrier gas to 100 cubic centimeters per second, and alternately inject six The interval between molybdenum carbonyl and hydrogen sulfide, molybdenum hexacarbonyl and hydrogen sulfide was 3 minutes, and the interval between hydrogen sulfide and molybdenum hexacarbonyl was 1 minute. A total of 10 cycles were injected, and a single layer of molybdenum disulfide was deposited on the substrate.

Embodiment 2

[0013] Place a 1 square centimeter clean silicon wafer with a thin film of silicon dioxide in the deposition reaction chamber, control the reaction pressure at 15 mbar, and the reaction temperature at 100°C; set the flow rate of the carrier gas to 500 cubic centimeters per second, pass the carrier gas Molybdenum hexacarbonyl and diethyl sulfide are alternately injected into the cavity, the interval between molybdenum hexacarbonyl and diethyl sulfide is 10 minutes, and the interval between diethyl sulfide and molybdenum hexacarbonyl is 10 minutes. A total of 100 cycles are injected, and the deposition is obtained Multilayer molybdenum disulfide.

Embodiment 3

[0015] Put 21.3 square centimeters of clean layered mica in the deposition reaction chamber, control the reaction pressure at 20 mbar, and the reaction temperature at 300°C; set the flow rate of the carrier gas to 400 cubic centimeters per second, and alternately inject six The interval between tungsten carbonyl and hydrogen sulfide, tungsten hexacarbonyl and hydrogen sulfide is 30 seconds, and the interval between hydrogen sulfide and tungsten hexacarbonyl is 20 seconds. A total of 1000 cycles are injected, and multi-layer tungsten disulfide is deposited.

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Abstract

The invention discloses a method for growing single-layer and multi-layer transition metal sulfides through alternating injection of reactants. By the adoption of the method, deposition reaction of the reactants is achieved alternately, the number of layers and area of grown transition metal sulfides are controlled by controlling reaction temperature and time, and layered transition metal sulfides high in quality are obtained. The method has the advantages that growth condition is accurate and controllable, operation is easy and convenient, and large-area preparation of transition metal sulfides can be achieved. The method has broad application prospects in fields such as nano-electronical appliances, lubricating materials and photocatalysis.

Description

technical field [0001] The invention belongs to the technical field of new materials, relates to nanometer material preparation technology, and specifically refers to a method for growing single-layer and multi-layer transition metal sulfides by alternately injecting reactants. Background technique [0002] Since two scientists from the University of Manchester successfully stripped graphene in 2004, two-dimensional materials have been favored by people for their excellent electrical, optical and mechanical properties. Graphene has been applied in lithium-ion batteries, solar cells, and sensors, showing excellent performance. Nevertheless, intrinsic graphene does not have a band gap, which severely limits its applications in electronic and optoelectronic devices. When the transition metal sulfide changes from a bulk material to a two-dimensional structure, the electronic band structure changes from an indirect band gap to a direct band gap. fields are widely used. The bas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B17/20C01G39/06C01G41/00C01G23/00C01G39/00
CPCC01B17/20C01G23/007C01G39/00C01G39/06C01G41/00
Inventor 张天宁陈鑫张克难俞伟伟孙艳戴宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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