Welding method of target module

Abstract

The invention provides a welding method of a tungsten titanium target module. The welding method comprises the following steps: a tungsten titanium target, a copper back plate and a middle layer are provided; the tungsten titanium target, the middle layer and the copper back plate are positioned in a vacuum ladle, and the surfaces to be welded of the middle layer and the tungsten titanium target are bonded with the surface to be welded of the copper back plate; the tungsten titanium target, the middle layer and the copper back plate are welded to form the tungsten titanium target module by using a hot isostatic pressing process; and after the welding is finished, the vacuum ladle is cooled, and the vacuum ladle is removed to obtain the tungsten titanium target module. The welding method can realize welding between the tungsten titanium target and the copper back plate, and is higher in welding efficiency; and the formed tungsten titanium target module is higher in welding strength and low in deformation to satisfy the demands of long-time stable target production and use.

Description

Technical field [0001] The invention relates to the manufacturing field of semiconductor sputtering target materials, in particular to a welding method of a target component. Background technique [0002] In the semiconductor industry, the target component is composed of a target that meets the sputtering performance and a back plate combined with the target. The back plate plays a supporting role in the target assembly and has the function of conducting heat. [0003] During the sputtering process, the working environment of the target component is relatively harsh. Specifically: the ambient temperature where the target assembly is located is relatively high, such as 300°C to 600°C; in addition, one side of the target assembly is forced to cool with cooling water, while the other side is at 10°C. -9 In the high vacuum environment of Pa, a huge pressure difference is formed on the two opposite sides of the target assembly; furthermore, the target assembly will be bombarded by vari...

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is that in the prior art, the target assembly formed by the tungsten-titanium target and the copper back plate has low welding strength and large deformation. In severe cases, the tungsten-titanium target is easily broken during the welding process Meet the needs of long-term stable production and use of tungsten-titanium target components

Images